WSD100N06GDN56 N-kanaal 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET produkt oersjoch
De spanning fan WSD100N06GDN56 MOSFET is 60V, de stroom is 100A, de wjerstân is 3mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.
WINSOK MOSFET applikaasje gebieten
Medyske macht foarrieden MOSFET, PDs MOSFET, drones MOSFET, elektroanyske sigaretten MOSFET, grutte apparaten MOSFET, en macht ark MOSFET.
WINSOK MOSFET komt oerien mei oare merk materiaal nûmers
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MOSFET parameters
| Symboal | Parameter | Wurdearring | Units | ||
| VDS | Drain-boarne Voltage | 60 | V | ||
| VGS | Gate-Boarne Voltage | ±20 | V | ||
| ID1,6 | Trochrinnende Drain Strom | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsearre Drain Strom | TC=25°C | 240 | A | |
| PD | Maksimum Power Dissipation | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Strom, Single puls | 45 | A | ||
| EAS3 | Single Pulse Avalanche Energy | 101 | mJ | ||
| TJ | Maksimum Junction Temperatuer | 150 | ℃ | ||
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ | ||
| RθJA1 | Thermal Resistance Junction nei ambient | Steady State | 55 | ℃/W | |
| RθJC1 | Thermal Resistance-Junction to Case | Steady State | 1.5 | ℃/W | |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid | |
| Statysk | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Strom | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate Leakage Aktuele | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Op skaaimerken | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS (oan)2 | Drain-Boarne On-state Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Switching | |||||||
| Qg | Totale Gate Charge | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Gate-Sour Charge | 16 | nC | ||||
| Qgd | Gate-Drain Charge | 4.0 | nC | ||||
| td (oan) | Ynskeakelje fertraging Tiid | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Ynskeakelje Rise Tiid | 8 | ns | ||||
| td (út) | Turn-off Delay Tiid | 50 | ns | ||||
| tf | Útskeakelje Fall Tiid | 11 | ns | ||||
| Rg | Gat ferset | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Dynamic | |||||||
| Ciss | Yn kapasiteit | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Out Capacitance | 1522 | pF | ||||
| Crss | Reverse Transfer Capacitance | 22 | pF | ||||
| Drain-boarne Diode Skaaimerken en maksimale wurdearrings | |||||||
| IS1,5 | Trochrinnende Boarne Strom | VG=VD=0V , Force Strom | 55 | A | |||
| ISM | Pulsearre boarne Aktueel 3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A, VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Tiid | ISD= 20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
