WSD100N15DN56G N-kanaal 150V 100A DFN5X6-8 WINSOK MOSFET

Part nûmer:WSD100N15DN56G

BVSS:150V

ID:100A

RDSON:6m ohm

Kanaal:N-kanaal

Pakket:DFN5X6-8

Stjoer e-mail nei ús PDF

Produkt Detail

De spanning fan WSD100N15DN56G MOSFET is 150V, de stroom is 100A, de wjerstân is 6mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

Medyske macht foarrieden MOSFET, PDs MOSFET, drones MOSFET, elektroanyske sigaretten MOSFET, grutte apparaten MOSFET, en macht ark MOSFET.

Symboal	Parameter	Wurdearring	Units
VDS	Drain-Boarne Voltage	150	V
VGS	Gate-Boarne Voltage	±20	V
ID	Continuous Drain Current, V_GS@ 10V(T_C= 25 ℃)	100	A
IDM	Pulsearre Drain Strom	360	A
EAS	Single Pulse Avalanche Energy	400	mJ
P_D	Totale krêftdissipaasje ..._C= 25 ℃)	160	W
RθJA	Termyske ferset, knooppunt-omjouwing	62	℃/W
RθJC	Termyske ferset, knooppunt-gefal	0.78	℃/W
TSTG	Storage Temperatur Range	-55 oant 175	℃
T_J	Operating Junction temperatuerberik	-55 oant 175	℃

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BV_DSS	Drain-Source Breakdown Voltage	V_GS= 0V, ik_D= 250uA	150	---	---	V
RDS(ON)	Statyske Drain-Boarne On-resistance²	V_GS= 10V, I_D= 20A	---	9	12	mΩ
VGS (de)	Gate Threshold Voltage	V_GS=V_DS,ik_D= 250uA	2.0	3.0	4.0	V
IDSS	Drain-Boarne Leakage Current	V_DS= 100V, V_GS= 0V, T_J= 25℃	---	---	1	uA
IGSS	Gate-Boarne Leakage Current	V_GS=±20V , V_DS= 0V	---	---	±100	nA
Q_g	Totale Gate Charge	V_DS= 50V, V_GS= 10V, I_D= 20A	---	66	---	nC
Q_gs	Gate-Boarne Charge		---	26	---
Q_gd	Gate-Drain Charge		---	18	---
Td (oan)	Turn-On fertraging Tiid	V_DD= 50V,V_GS= 10V R_G= 2Ω, I_D= 20A	---	37	---	ns
T_r	Rise Tiid		---	98	---
Td (út)	Turn-Off fertraging Tiid		---	55	---
T_f	Fall Tiid		---	20	---
C_iss	Input Capacitance	V_DS= 30V, V_GS=0V, f=1MHz	---	5450	---	pF
Coss	Output Capacitance		---	1730	---
C_rss	Reverse Transfer Capacitance		---	195	---