WSD2090DN56 N-kanaal 20V 80A DFN5*6-8 WINSOK MOSFET

koarte beskriuwing:

Model Oantal:WSD2090DN56

BVSS:20V

RDSON:2,8mΩ

ID:80A

Kanaal:N-kanaal

Pakket:DFN5*6-8

Produkt Summery:De spanning fan WSD2090DN56 MOSFET is 20V, de stroom is 80A, de wjerstân is 2.8mΩ, it kanaal is N-kanaal, en it pakket is DFN5 * 6-8.

Applikaasjes:Elektroanyske sigaretten, drones, elektryske ark, fascia-gewearen, PD, lytse húshâldlike apparaten, ensfh.

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Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSD2090DN56 is de N-Ch MOSFET mei de heechste prestaasje mei ekstreem hege sellentichtens, dy't poerbêste RDSON- en poartelading leverje foar de measte syngroane buck-konverterapplikaasjes. De WSD2090DN56 foldogge oan de RoHS en Green Product eask 100% EAS garandearre mei folsleine funksje betrouberens goedkard.

Features

Avansearre Trench-technology mei hege sel tichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ôffal, 100% EAS garandearre, Grien apparaat beskikber

Applikaasjes

Switch, Power System, Load Switch, elektroanyske sigaretten, drones, elektryske ark, fascia-guns, PD, lytse húshâldlike apparaten, ensfh.

korrespondearjend materiaal nûmer

AOS AON6572

Wichtige parameters

Absolute maksimale beoardielingen (TC = 25 ℃, behalve as oars oanjûn)

Symboal	Parameter	Max.	Units
VDSS	Drain-Boarne Voltage	20	V
VGSS	Gate-Boarne Voltage	±12	V
ID@TC=25℃	Trochrinnende Drain Strom, VGS @ 10V1	80	A
ID@TC=100℃	Trochrinnende Drain Strom, VGS @ 10V1	59	A
IDM	Pulsed Drain Aktuele notysje1	360	A
EAS	Single Pulsed Avalanche Energy note2	110	mJ
PD	Power Dissipation	81	W
RθJA	Thermal Resistance, Junction to Case	65	℃/W
RθJC	Thermal Resistance Junction-Geval 1	4	℃/W
TJ, TSTG	Bedriuws- en opslachtemperatuerberik	-55 oant +175	℃

Elektryske skaaimerken (TJ = 25 ℃, útsein as oars oanjûn)

Symboal	Parameter	Betingsten	Min	Typ	Max	Units
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	BVDSS temperatuer koëffisjint	Referinsje nei 25 ℃, ID = 1mA	---	0.018	---	V/℃
VGS (de)	Gate Threshold Voltage	VDS= VGS, ID=250μA	0,50	0.65	1.0	V
RDS(ON)	Statyske Drain-Boarne On-resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(ON)	Statyske Drain-Boarne On-resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Zero Gate Voltage Drain Strom	VDS=20V, VGS=0V	---	---	1	μA
IGSS	Gate-Body Leakage Strom	VGS=±10V, VDS=0V	---	---	±100	nA
Ciss	Input Capacitance	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Output Capacitance		---	460	---
Crss	Reverse Transfer Capacitance		---	446	---
Qg	Totale Gate Charge	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Gate-Boarne Charge		---	1.73	---
Qgd	Gate-Drain Charge		---	3.1	---
tD (oan)	Ynskeakelje fertraging Tiid	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Ynskeakelje Rise Tiid		---	37	---
tD (út)	Turn-off Delay Tiid		---	63	---
tf	Turn-off fall Tiid		---	52	---
VSD	Diode Forward Voltage	IS=7.6A, VGS=0V	---	---	1.2	V