WSD20L120DN56 P-kanaal -20V -120A DFN5*6-8 WINSOK MOSFET

koarte beskriuwing:

Model Oantal:WSD20L120DN56

BVSS:-20V

RDSON:2.1mΩ

ID:-120A

Kanaal:P-kanaal

Pakket:DFN5*6-8

Produkt Summery:De MOSFET WSD20L120DN56 wurket op -20 volt en lûkt in stroom fan -120 ampère. It hat in ferset fan 2,1 milliohm, in P-kanaal, en komt yn in DFN5 * 6-8 pakket.

Applikaasjes:E-sigaretten, draadloze opladers, motoren, drones, medyske apparatuer, autoladers, controllers, digitale apparaten, lytse apparaten, en konsuminteelektronika.

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Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSD20L120DN56 is in topprestearjende P-Ch MOSFET mei in selstruktuer mei hege tichtheid, en jout geweldige RDSON- en poartelading foar it measte gebrûk fan syngroane buck-konverter. De WSD20L120DN56 foldocht oan 100% EAS-easken foar RoHS en miljeufreonlike produkten, mei betrouberens goedkarring foar folsleine funksje.

Features

1, Avansearre Trench technology mei hege sel tichtheid
2, Super Low Gate Charge
3, Excellent CdV / dt effekt ferfal
4, 100% EAS Guaranteed 5, Green Device beskikber

Applikaasjes

Heechfrekwinsje Point-of-Load Synchronous Buck Converter foar MB/NB/UMPC/VGA, Netwurk DC-DC Power System, Load Switch, E-sigaret, Wireless Charger, Motors, Drones, Medysk, Autolader, Controller, Digital Products, Lytse huishoudelijke apparaten, Consumer Electronics.

korrespondearjend materiaal nûmer

AOS AON6411,NIKO PK5A7BA

Wichtige parameters

Symboal	Parameter	Wurdearring		Units
Symboal	Parameter	10s	Steady State	Units
VDS	Drain-Boarne Voltage	-20		V
VGS	Gate-Boarne Voltage	±10		V
ID@TC=25℃	Trochrinnende Drain Strom, VGS @ -10V1	-120		A
ID@TC=100℃	Trochrinnende Drain Strom, VGS @ -10V1	-69,5		A
ID@TA=25℃	Trochrinnende Drain Strom, VGS @ -10V1	-25	-22	A
ID@TA=70℃	Trochrinnende Drain Strom, VGS @ -10V1	-24	-18	A
IDM	Pulsearre Drain Strom 2	-340		A
EAS	Single Pulse Avalanche Energy3	300		mJ
IAS	Avalanche Aktueel	-36		A
PD@TC=25℃	Totale krêftdissipaasje 4	130		W
PD@TA=25℃	Totale krêftdissipaasje 4	6.8	6.25	W
TSTG	Storage Temperatur Range	-55 oant 150		℃
TJ	Operating Junction temperatuerberik	-55 oant 150		℃

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS temperatuer koëffisjint	Referinsje nei 25 ℃, ID = -1mA	---	-0.0212	---	V/℃
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=-4.5V, ID=-20A	---	2.1	2.7	mΩ
RDS(ON)	Statyske drain-boarne On-resistance2					mΩ
		VGS=-2.5V, ID=-20A	---	2.8	3.7
VGS (de)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-0.4	-0.6	-1.0	V
		VGS=VDS, ID =-250uA
△VGS(th)	VGS (th) temperatuer koëffisjint		---	4.8	---	mV/℃
IDSS	Drain-Boarne Leakage Current	VDS=-20V, VGS=0V, TJ=25℃	---	---	-1	uA
IDSS	Drain-Boarne Leakage Current					uA
		VDS=-20V, VGS=0V, TJ=55℃	---	---	-6
IGSS	Gate-Boarne Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V, ID=-20A	---	100	---	S
Rg	Gate Ferset	VDS=0V, VGS=0V, f=1MHz	---	2	5	Ω
Qg	Totale Gate Charge (-4.5V)	VDS=-10V, VGS=-4.5V, ID=-20A	---	100	---	nC
Qgs	Gate-Boarne Charge		---	21	---
Qgd	Gate-Drain Charge		---	32	---
Td (oan)	Turn-On fertraging Tiid	VDD=-10V, VGEN=-4.5V, RG=3Ω ID=-1A,RL=0.5Ω	---	20	---	ns
Tr	Rise Tiid		---	50	---
Td (út)	Turn-Off fertraging Tiid		---	100	---
Tf	Fall Tiid		---	40	---
Ciss	Input Capacitance	VDS=-10V, VGS=0V, f=1MHz	---	4950	---	pF
Coss	Output Capacitance		---	380	---
Crss	Reverse Transfer Capacitance		---	290	---