WSD25280DN56G N-kanaal 25V 280A DFN5X6-8 WINSOK MOSFET

produkten

WSD25280DN56G N-kanaal 25V 280A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD25280DN56G

BVSS:25V

ID:280A

RDSON:0,7mΩ 

Kanaal:N-kanaal

Pakket:DFN5X6-8


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD25280DN56G MOSFET is 25V, de stroom is 280A, de wjerstân is 0.7mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

Heechfrekwinsje Point-of-Load Synchronous,Buck Converter,Netwurk DC-DC Power System,Power Tool Applikaasje,E-sigaretten MOSFET, draadloze opladen MOSFET, drones MOSFET, medyske soarch MOSFET, autoladers MOSFET, controllers MOSFET, digitale produkten MOSFET, lytse húshâldlike apparaten MOSFET, konsuminteelektronika MOSFET.

WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

Nxperian MOSFET PSMN1R-4ULD.

POTENS Semiconductor MOSFET PDC262X.

MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-boarne Voltage

25

V

VGS

Gate-Source Spanning

±20

V

ID@TC=25

Trochrinnende Drain Strom(Silicon Limited1,7

280

A

ID@TC=70

Continuous Drain Current (Silicon Limited1,7

190

A

IDM

Pulsearre Drain Strom2

600

A

EAS

Single Pulse Avalanche Energy3

1200

mJ

IAS

Avalanche Aktueel

100

A

PD@TC=25

Totale Power Dissipation4

83

W

TSTG

Storage Temperatur Range

-55 oant 150

TJ

Operating Junction temperatuerberik

-55 oant 150

 

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

BVDSS

Drain-Source Breakdown Voltage VGS= 0V, ikD= 250uA

25

---

---

V

BVDS/△TJ

BVDSSTemperatuer koëffisjint Ferwizing nei 25,ikD= 1 mA

---

0.022

---

V/

RDS(ON)

Statyske Drain-Boarne On-resistance2 VGS= 10V, ID= 20A

---

0.7

0.9 mΩ
VGS= 4.5V, ID= 20A

---

1.4

1.9

VGS (de)

Gate Threshold Voltage VGS=VDS,ikD= 250uA

1.0

---

2.5

V

VGS(th)

VGS(th)Temperatuer koëffisjint

---

-6.1

---

mV/

IDSS

Drain-Boarne Leakage Current VDS= 20V, VGS= 0V, TJ=25

---

---

1

uA

VDS= 20V, VGS= 0V, TJ=55

---

---

5

IGSS

Gate-Boarne Leakage Current VGS=±20 v,vDS= 0V

---

---

±100

nA

gfs

Forward Transconductance VDS= 5V, ikD= 10A

---

40

---

S

Rg

Gate Ferset VDS= 0V, VGS=0V, f=1MHz

---

3.8

1.5

Ω

Qg

Totale Gate Charge (4.5V) VDS= 15V, VGS= 4.5V, ID= 20A

---

72

---

nC

Qgs

Gate-Boarne Charge

---

18

---

Qgd

Gate-Drain Charge

---

24

---

Td (oan)

Turn-On fertraging Tiid VDD= 15V, VGEN= 10V ,RG=1Ω,ikD= 10A

---

33

---

ns

Tr

Tiid om op te stean

---

55

---

Td (út)

Turn-Off fertraging Tiid

---

62

---

Tf

Fall Tiid

---

22

---

Ciss

Input Capacitance VDS= 15V, VGS=0V, f=1MHz

---

7752

---

pF

Coss

Output Capacitance

---

1120

---

Crss

Reverse Transfer Capacitance

---

650

---

 

 


  • Foarige:
  • Folgjende:

  • Skriuw jo berjocht hjir en stjoer it nei ús