WSD30140DN56 N-kanaal 30V 85A DFN5*6-8 WINSOK MOSFET

koarte beskriuwing:

Model nûmer:WSD30140DN56

BVSS:30V

RDSON:1,7mΩ

ID:85A

Kanaal:N-kanaal

Pakket:DFN5*6-8

Produkt Summery:De spanning fan WSD30140DN56 MOSFET is 30V, de stroom is 85A, de wjerstân is 1.7mΩ, it kanaal is N-kanaal, en it pakket is DFN5 * 6-8.

Oanfraach:Elektroanyske sigaretten, draadloze opladers, drones, medyske soarch, autoladers, controllers, digitale produkten, lytse apparaten, konsuminteelektronika, ensfh.

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Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSD30140DN56 is de N-kanaal MOSFET-sleuf mei heechste prestaasjes mei heul hege seltichtens dy't poerbêste RDSON- en poartelading leveret foar de measte syngroane buck-konverterapplikaasjes.WSD30140DN56 foldocht oan RoHS en griene produkt easken, 100% EAS garânsje, folsleine funksje betrouberens goedkard.

Features

Avansearre Trench-technology mei hege sel tichtheid, ultra-lege poarte lading, poerbêst CdV / dt effekt attenuation, 100% EAS garânsje, griene apparaten beskikber

Oanfraach

Heechfrekwinsje punt-of-load syngronisaasje, buck converters, netwurk DC-DC macht systemen, elektryske ark applikaasjes, elektroanyske sigaretten, draadloos opladen, drones, medyske soarch, auto opladen, controllers, digitale produkten, lytse apparaten, konsumint elektroanika

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Wichtige parameters

Symboal	Parameter	Wurdearring	Units
VDS	Drain-boarne Voltage	30	V
VGS	Gate-Boarne Voltage	±20	V
ID@TC=25℃	Trochrinnende Drain Strom, VGS @ 10V1,7	85	A
ID@TC=70℃	Trochrinnende Drain Strom, VGS @ 10V1,7	65	A
IDM	Pulsearre Drain Strom 2	300	A
PD@TC=25℃	Totale krêftferbrûk 4	50	W
TSTG	Storage Temperatur Range	-55 oant 150	℃
TJ	Operating Junction temperatuerberik	-55 oant 150	℃

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=250uA	30	---	---	V
△BVDSS/△TJ	BVDSS temperatuer koëffisjint	Referinsje nei 25 ℃, ID = 1mA	---	0.02	---	V/℃
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=10V, ID=20A	---	1.7	2.4	mΩ
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=4.5V, ID=15A		2.5	3.3	mΩ
VGS (de)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.5	V
	Drain-Boarne Leakage Current	VDS=24V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Boarne Leakage Current	VDS=24V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Boarne Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V, ID=20A	---	90	---	S
Qg	Totale Gate Charge (4.5V)	VDS=15V, VGS=4.5V, ID=20A	---	26	---	nC
Qgs	Gate-Boarne Charge		---	9.5	---
Qgd	Gate-Drain Charge		---	11.4	---
Td (oan)	Turn-On fertraging Tiid	VDD=15V, VGEN=10V, RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Tiid om op te stean		---	6	---
Td (út)	Turn-Off fertraging Tiid		---	38,5	---
Tf	Fall Tiid		---	10	---
Ciss	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	3000	---	pF
Coss	Output Capacitance		---	1280	---
Crss	Reverse Transfer Capacitance		---	160	---