WSD30150ADN56 N-kanaal 30V 145A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET produkt oersjoch
De spanning fan WSD30150DN56 MOSFET is 30V, de stroom is 150A, de wjerstân is 1.8mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.
WINSOK MOSFET applikaasje gebieten
E-sigaretten MOSFET, wireless opladen MOSFET, drones MOSFET, medyske soarch MOSFET, auto chargers MOSFET, controllers MOSFET, digitale produkten MOSFET, lytse húshâldlike apparaten MOSFET, konsumint elektroanika MOSFET.
WINSOK MOSFET komt oerien mei oare merk materiaal nûmers
AOS MOSFET AON6512,AONS3234.
Onsemi,FAIRCHILD MOSFET FDMC81DCCM.
NXP MOSFET PSMN1R7-3YL.
TOSHIBA MOSFET TPH1R43NL.
PANJIT MOSFET PJQ5428.
NIKO-SEM MOSFET PKC26BB,PKE24BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET parameters
| Symboal | Parameter | Wurdearring | Units |
| VDS | Drain-boarne Voltage | 30 | V |
| VGS | Gate-Source Spanning | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS@10V1,7 | 150 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS@10V1,7 | 83 | A |
| IDM | Pulsearre Drain Strom2 | 200 | A |
| EAS | Single Pulse Avalanche Energy3 | 125 | mJ |
| IAS | Avalanche Aktueel | 50 | A |
| PD@TC=25℃ | Totale Power Dissipation4 | 62,5 | W |
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | ℃ |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDSS | Drain-Source Breakdown Voltage | VGS= 0V, ikD= 250uA | 30 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatuer koëffisjint | Ferwizing nei 25℃,ikD= 1 mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Statyske Drain-Boarne On-resistance2 | VGS= 10V, ID= 20A | --- | 1.8 | 2.4 | mΩ |
| VGS= 4.5V, ID= 15A | 2.4 | 3.2 | ||||
| VGS (de) | Gate Threshold Voltage | VGS=VDS,ikD= 250uA | 1.4 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Temperatuer koëffisjint | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS= 24V, VGS= 0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS= 24V, VGS= 0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20 v,vDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ikD= 10A | --- | 27 | --- | S |
| Rg | Gate Ferset | VDS= 0V, VGS=0V, f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Totale Gate Charge (4.5V) | VDS= 15V, VGS= 4.5V, ID= 30A | --- | 26 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 9.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 11.4 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD= 15V, VGEN= 10V, RG=6Ω,ikD=1A, RL=15Ω. | --- | 20 | --- | ns |
| Tr | Tiid om op te stean | --- | 12 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 69 | --- | ||
| Tf | Fall Tiid | --- | 29 | --- | ||
| Ciss | Input Capacitance | VDS= 15V, VGS=0V, f=1MHz | 2560 | 3200 | 3850 | pF |
| Coss | Output Capacitance | 560 | 680 | 800 | ||
| Crss | Reverse Transfer Capacitance | 260 | 320 | 420 |
