WSD30150DN56 N-kanaal 30V 150A DFN5X6-8 WINSOK MOSFET

produkten

WSD30150DN56 N-kanaal 30V 150A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD30150DN56

BVSS:30V

ID:150A

RDSON:1.8mΩ 

Kanaal:N-kanaal

Pakket:DFN5X6-8


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD30150DN56 MOSFET is 30V, de stroom is 150A, de wjerstân is 1.8mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

E-sigaretten MOSFET, draadloze opladen MOSFET, drones MOSFET, medyske soarch MOSFET, autoladers MOSFET, controllers MOSFET, digitale produkten MOSFET, lytse húshâldlike apparaten MOSFET, konsumintelektronika MOSFET.

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MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-Boarne Voltage

30

V

VGS

Gate-Source Spanning

±20

V

ID@TC=25

Continuous Drain Current, VGS@10V1,7

150

A

ID@TC=100

Continuous Drain Current, VGS@10V1,7

83

A

IDM

Pulsearre Drain Strom2

200

A

EAS

Single Pulse Avalanche Energy3

125

mJ

IAS

Avalanche Aktueel

50

A

PD@TC=25

Totale Power Dissipation4

62,5

W

TSTG

Storage Temperatur Range

-55 oant 150

TJ

Operating Junction temperatuerberik

-55 oant 150

 

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

BVDSS

Drain-Source Breakdown Voltage VGS= 0V, ikD= 250uA

30

---

---

V

BVDS/△TJ

BVDSSTemperatuer koëffisjint Ferwizing nei 25,ikD= 1 mA

---

0.02

---

V/

RDS(ON)

Statyske Drain-Boarne On-resistance2 VGS= 10V, ID= 20A

---

1.8

2.4 mΩ
VGS= 4.5V, ID= 15A  

2.4

3.2

VGS (de)

Gate Threshold Voltage VGS=VDS,ikD= 250uA

1.4

1.7

2.5

V

VGS(th)

VGS(th)Temperatuer koëffisjint

---

-6.1

---

mV/

IDSS

Drain-Boarne Leakage Current VDS= 24V, VGS= 0V, TJ=25

---

---

1

uA

VDS= 24V, VGS= 0V, TJ=55

---

---

5

IGSS

Gate-Boarne Leakage Current VGS=±20 v,vDS= 0V

---

---

±100

nA

gfs

Forward Transconductance VDS= 5V, ikD= 10A

---

27

---

S

Rg

Gate Ferset VDS= 0V, VGS=0V, f=1MHz

---

0.8

1.5

Ω

Qg

Totale Gate Charge (4.5V) VDS= 15V, VGS= 4.5V, ID= 30A

---

26

---

nC

Qgs

Gate-Boarne Charge

---

9.5

---

Qgd

Gate-Drain Charge

---

11.4

---

Td (oan)

Turn-On fertraging Tiid VDD= 15V, VGEN= 10V, RG=6Ω,ikD=1A, RL=15Ω.

---

20

---

ns

Tr

Rise Tiid

---

12

---

Td (út)

Turn-Off fertraging Tiid

---

69

---

Tf

Fall Tiid

---

29

---

Ciss

Input Capacitance VDS= 15V, VGS=0V, f=1MHz 2560 3200

3850

pF

Coss

Output Capacitance

560

680

800

Crss

Reverse Transfer Capacitance

260

320

420


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