WSD3023DN56 N-Ch en P-kanaal 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Algemiene beskriuwing
De WSD3023DN56 is de N-ch en P-ch MOSFET's mei de heechste prestaasje mei ekstreem hege sellentichtens, dy't poerbêste RDSON- en poartelading leverje foar de measte syngroane buck-konverterapplikaasjes. De WSD3023DN56 foldogge oan de RoHS en Green Product eask 100% EAS garandearre mei folsleine funksje betrouberens goedkard.
Features
Avansearre Trench-technology mei hege seldichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Grien apparaat beskikber.
Applikaasjes
Hege frekwinsje Point-of-Load Synchronous Buck Converter foar MB / NB / UMPC / VGA, Netwurk DC-DC Power System, CCFL Back-light Inverter, Drones, motors, auto-elektroanika, grutte apparaten.
korrespondearjend materiaal nûmer
PANJIT PJQ5606
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units | |
| N-Ch | P-Ch | |||
| VDS | Drain-Boarne Voltage | 30 | -30 | V |
| VGS | Gate-Boarne Voltage | ±20 | ±20 | V |
| ID | Trochrinnende drainstroom, VGS(NP)=10V, Ta=25℃ | 14* | -12 | A |
| Trochrinnende drainstream, VGS(NP)=10V, Ta=70℃ | 7.6 | -9.7 | A | |
| IDP a | Pulse Drain Current Tested, VGS (NP) = 10V | 48 | -48 | A |
| EAS c | Avalanche Energy, Single puls, L=0.5mH | 20 | 20 | mJ |
| IAS c | Avalanche Current, Single puls, L=0.5mH | 9 | -9 | A |
| PD | Totale krêftdissipaasje, Ta = 25 ℃ | 5.25 | 5.25 | W |
| TSTG | Storage Temperatur Range | -55 oant 175 | -55 oant 175 | ℃ |
| TJ | Operating Junction temperatuerberik | 175 | 175 | ℃ |
| RqJA b | Termyske ferset-knooppunt nei Ambient, Steady State | 60 | 60 | ℃/W |
| RqJC | Termyske ferset-knooppunt nei saak, Steady State | 6.25 | 6.25 | ℃/W |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 30 | --- | --- | V |
| RDS(ON)d | Statyske Drain-Boarne On-resistance | VGS=10V, ID=8A | --- | 14 | 18.5 | mΩ |
| VGS=4.5V, ID=5A | --- | 17 | 25 | |||
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.3 | 1.8 | 2.3 | V |
| IDSS | Drain-Boarne Leakage Current | VDS=20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V, VGS=0V, TJ=85℃ | --- | --- | 30 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 1.7 | 3.4 | Ω |
| Qge | Totale Gate Charge | VDS=15V, VGS=4.5V, IDS=8A | --- | 5.2 | --- | nC |
| Qgse | Gate-Boarne Charge | --- | 1.0 | --- | ||
| Qgde | Gate-Drain Charge | --- | 2.8 | --- | ||
| Td(op)e | Turn-On fertraging Tiid | VDD=15V, RL=15R, IDS=1A, VGEN=10V, RG=6R. | --- | 6 | --- | ns |
| Tre | Rise Tiid | --- | 8.6 | --- | ||
| Td(út)e | Turn-Off fertraging Tiid | --- | 16 | --- | ||
| Tfe | Fall Tiid | --- | 3.6 | --- | ||
| Cisse | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 545 | --- | pF |
| Cosse | Output Capacitance | --- | 95 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 55 | --- |
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