WSD3023DN56 N-Ch en P-kanaal 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

WSD3023DN56 N-Ch en P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET Featured Image

koarte beskriuwing:

Model nûmer:WSD3023DN56

BVSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Kanaal:N-Ch en P-Channel

Pakket:DFN5*6-8

Produkt Summery:De spanning fan WSD3023DN56 MOSFET is 30V/-30V, de hjoeddeiske is14A/-12A, de wjerstân is 14mΩ/23mΩ, it kanaal is N-Ch en P-Channel, en it pakket is DFN5 * 6-8.

Oanfraach:Drones, motors, autoelektronika, grutte apparaten.

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Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSD3023DN56 is de N-ch en P-ch MOSFET's mei de heechste prestaasje mei ekstreem hege sellentichtens, dy't poerbêste RDSON- en poartelading leverje foar de measte syngroane buck-konverterapplikaasjes.De WSD3023DN56 foldogge oan de RoHS en Green Product eask 100% EAS garandearre mei folsleine funksje betrouberens goedkard.

Features

Avansearre Trench-technology mei hege seldichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Grien apparaat beskikber.

Oanfraach

Hege frekwinsje Point-of-Load Synchronous Buck Converter foar MB / NB / UMPC / VGA, Netwurk DC-DC Power System, CCFL Back-light Inverter, Drones, motors, auto-elektroanika, grutte apparaten.

korrespondearjend materiaal nûmer

PANJIT PJQ5606

Wichtige parameters

Symboal	Parameter	Wurdearring		Units
Symboal	Parameter	N-Ch	P-Ch	Units
VDS	Drain-boarne Voltage	30	-30	V
VGS	Gate-Boarne Voltage	±20	±20	V
ID	Trochrinnende drainstroom, VGS(NP)=10V, Ta=25℃	14*	-12	A
ID	Trochrinnende drainstream, VGS(NP) = 10V, Ta = 70 ℃	7.6	-9.7	A
IDP a	Pulse Drain Current Tested, VGS (NP) = 10V	48	-48	A
EAS c	Avalanche Energy, Single puls, L=0.5mH	20	20	mJ
IAS c	Avalanche Current, Single puls, L=0.5mH	9	-9	A
PD	Totale krêftdissipaasje, Ta = 25 ℃	5.25	5.25	W
TSTG	Storage Temperatur Range	-55 oant 175	-55 oant 175	℃
TJ	Operating Junction temperatuerberik	175	175	℃
RqJA b	Termyske ferset-knooppunt nei Ambient, Steady State	60	60	℃/W
RqJC	Termyske ferset-knooppunt nei saak, Steady State	6.25	6.25	℃/W

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=250uA	30	---	---	V
RDS(ON)d	Statyske Drain-Boarne On-resistance	VGS=10V, ID=8A	---	14	18.5	mΩ
RDS(ON)d	Statyske Drain-Boarne On-resistance	VGS=4.5V, ID=5A	---	17	25	mΩ
VGS (de)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Drain-Boarne Leakage Current	VDS=20V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Boarne Leakage Current	VDS=20V, VGS=0V, TJ=85℃	---	---	30	uA
IGSS	Gate-Boarne Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
Rg	Gate Ferset	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Totale Gate Charge	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Boarne Charge		---	1.0	---
Qgde	Gate-Drain Charge		---	2.8	---
Td(op)e	Turn-On fertraging Tiid	VDD=15V, RL=15R, IDS=1A, VGEN=10V, RG=6R.	---	6	---	ns
Tre	Tiid om op te stean		---	8.6	---
Td(út)e	Turn-Off fertraging Tiid		---	16	---
Tfe	Fall Tiid		---	3.6	---
Cisse	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	545	---	pF
Cosse	Output Capacitance		---	95	---
Crsse	Reverse Transfer Capacitance		---	55	---