WSD30300DN56G N-kanaal 30V 300A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET produkt oersjoch
De spanning fan WSD20100DN56 MOSFET is 20V, de stroom is 90A, de wjerstân is 1.6mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.
WINSOK MOSFET applikaasje gebieten
Elektroanyske sigaretten MOSFET, drones MOSFET, elektryske ark MOSFET, fascia guns MOSFET, PD MOSFET, lytse húshâldlike apparaten MOSFET.
WINSOK MOSFET komt oerien mei oare merk materiaal nûmers
AOS MOSFET AON6572.
POTENS Semiconductor MOSFET PDC394X.
MOSFET parameters
| Symboal | Parameter | Wurdearring | Units |
| VDS | Drain-Boarne Voltage | 20 | V |
| VGS | Gate-Boarne Voltage | ±12 | V |
| ID@TC= 25℃ | Trochrinnende Drain Strom1 | 90 | A |
| ID@TC= 100 ℃ | Trochrinnende Drain Strom1 | 48 | A |
| IDM | Pulsearre Drain Strom2 | 270 | A |
| EAS | Single Pulse Avalanche Energy3 | 80 | mJ |
| IAS | Avalanche Aktueel | 40 | A |
| PD@TC= 25℃ | Totale Power Dissipation4 | 83 | W |
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient1(t≦10S) | 20 | ℃/W |
| RθJA | Thermal Resistance Junction-ambient1(Steady State) | 55 | ℃/W |
| RθJC | Thermal Resistance Junction-saak1 | 1.5 | ℃/W |
| Symboal | Parameter | Betingsten | Min | Typ | Max | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | 23 | --- | V |
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.68 | 1.0 | V |
| RDS(ON) | Statyske Drain-Boarne On-resistance2 | VGS=10V, ID=20A | --- | 1.6 | 2.0 | mΩ |
| RDS(ON) | Statyske Drain-Boarne On-resistance2 | VGS=4.5V, ID=20A | 1.9 | 2.5 | mΩ | |
| RDS(ON) | Statyske Drain-Boarne On-resistance2 | VGS=2.5V, ID=20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Drain-Boarne Leakage Current | VDS=16V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V, VGS=0V, TJ=125℃ | --- | --- | 5 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±10V, VDS=0V | --- | --- | ±10 | uA |
| Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Totale Gate Charge (10V) | VDS=15V, VGS=10V, ID=20A | --- | 77 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 8.7 | --- | ||
| Qgd | Gate-Drain Charge | --- | 14 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=15V, VGS=10V, RG=3, ID=20A | --- | 10.2 | --- | ns |
| Tr | Rise Tiid | --- | 11.7 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 56.4 | --- | ||
| Tf | Fall Tiid | --- | 16.2 | --- | ||
| Ciss | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | --- | 4307 | --- | pF |
| Coss | Output Capacitance | --- | 501 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 321 | --- | ||
| IS | Trochrinnende Boarne Strom1,5 | VG=VD=0V , Krêftstroom | --- | --- | 50 | A |
| VSD | Diode Forward Voltage2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Tiid | IF=20A, di/dt=100A/µs, TJ=25℃ | --- | 22 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 72 | --- | nC |
