WSD4098 Dual N-Channel 40V 22A DFN5*6-8 WINSOK MOSFET

koarte beskriuwing:

Dit is in magnetyske draadloze machtbank dy't automatysk Apple-tillefoans herkent en gjin knopaktivearring nedich is. It integriert 2.0 / QC3.0 / PA2.0 / PD3.0 / SCP / AFC ynfier en útfier fluch opladen protokollen. It is in draadloze powerbankprodukt dat kompatibel is mei Apple / Samsung mobile tillefoan syngroane boost / step-down converters, Li-batterijoplaadbehear, digitale buiskrêftyndikaasje, magnetyske draadloze opladen en oare funksjes.

Model Oantal:WSD4098

BVSS:40V

RDSON:7,8mΩ

ID:22A

Kanaal:Dual N-kanaal

Pakket:DFN5*6-8

Produkt Summery:De spanning fan WSD4098 MOSFET is 40V, de hjoeddeistige is 22A, de wjerstân is 7.8mΩ, it kanaal is Dual N-Channel, en it pakket is DFN5 * 6-8.

Applikaasjes:E-sigaretten, draadloze opladen, motoren, drones, medyske soarch, autoladers, controllers, digitale produkten, lytse húshâldlike apparaten, konsuminteelektronika.

Stjoer Inquiry PDF

Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSD4098DN56 is de Dual N-Ch MOSFET-sleuf mei de heechste prestaasjes mei ekstreem hege sellentichtens, dy't poerbêste RDSON- en poartelading leverje foar de measte syngroane buck-konverterapplikaasjes. De WSD4098DN56 foldogge oan de RoHS en Green Product eask 100% EAS garandearre mei folsleine funksje betrouberens goedkard.

Features

Avansearre Trench-technology mei hege sel tichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Grien apparaat beskikber

Applikaasjes

Heechfrekwinsje Point-of-Load Synchronous, Buck Converter foar MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-sigaretten, draadloze opladen, motoren, drones, medyske soarch, autoladers, controllers, digitaal produkten, lytse húshâldlike apparaten, konsuminteelektronika.

korrespondearjend materiaal nûmer

AOS AON6884

Wichtige parameters

Symboal	Parameter		Wurdearring	Ienheid
Common Wurdearrings
VDSS	Drain-boarne Voltage		40	V
VGSS	Gate-Boarne Voltage		±20	V
TJ	Maksimum Junction Temperatuer		150	°C
TSTG	Storage Temperatur Range		-55 oant 150	°C
IS	Diode Continuous Foarút Strom	TA=25°C	11.4	A
ID	Trochrinnende Drain Strom	TA=25°C	22	A
ID	Trochrinnende Drain Strom			A
		TA=70°C	22
ik DM b	Pulse Drain Current Tested	TA=25°C	88	A
PD	Maksimum Power Dissipation	T. =25°C	25	W
PD	Maksimum Power Dissipation	TC=70°C	10	W
RqJL	Thermal Resistance-Junction to Lead	Steady State	5	°C/W
RqJA	Termyske ferset-knooppunt nei Ambient	t £10s	45	°C/W
RqJA	Termyske ferset-knooppunt nei Ambient	Steady State b	90	°C/W
I AS d	Avalanche Strom, Single puls	L=0,5mH	28	A
E AS d	Avalanche Energy, Single puls	L=0,5mH	39.2	mJ

Symboal	Parameter	Test Betingsten		Min.	Typ.	Max.	Ienheid
Statyske skaaimerken
BVDS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gate Voltage Drain Strom	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Strom						mA
			TJ=85°C	-	-	30
VGS (de)	Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.2	1.8	2.5	V
IGSS	Gate Leakage Aktuele	VGS=±20V, VDS=0V		-	-	±100	nA
R DS(ON) e	Drain-Boarne On-state Resistance	VGS=10V, IDS=14A		-	6.8	7.8	m W
R DS(ON) e	Drain-Boarne On-state Resistance	VGS=4.5V, IDS=12A		-	9.0	11	m W
Diode Skaaimerken
V SD e	Diode Forward Voltage	ISD=1A, VGS=0V		-	0,75	1.1	V
trr	Reverse Recovery Tiid	ISD=20A, dlSD /dt=100A/µs		-	23	-	ns
Qrr	Reverse Recovery Charge	ISD=20A, dlSD /dt=100A/µs		-	13	-	nC
Dynamyske skaaimerken f
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Input Capacitance	VGS=0V, VDS=20V, Frekwinsje = 1.0MHz		-	1370	1781	pF
Coss	Output Capacitance			-	317	-
Crss	Reverse Transfer Capacitance			-	96	-
td(ON)	Fertraging tiid ynskeakelje	VDD = 20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Ynskeakelje Rise Time			-	8	-
td (út)	Turn-off Delay Tiid			-	30	-
tf	Útskeakelje Fall Tiid			-	21	-
Gate Charge Characteristics f
Qg	Totale Gate Charge	VDS=20V, VGS=10V, IDS=6A		-	23	28	nC
Qg	Totale Gate Charge	VDS=20V, VGS=4.5V, IDS=6A		-	22	-
Qgth	Threshold Gate Charge			-	2.6	-
Qgs	Gate-Boarne Charge			-	4.7	-
Qgd	Gate-Drain Charge			-	3	-