WSD4280DN22 Dual P-kanaal -15V -4.6A DFN2X2-6L WINSOK MOSFET

produkten

WSD4280DN22 Dual P-kanaal -15V -4.6A DFN2X2-6L WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD4280DN22

BVSS:-15V

ID:-4.6A

RDSON:47mΩ 

Kanaal:Dual P-kanaal

Pakket:DFN2X2-6L


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD4280DN22 MOSFET is -15V, de stroom is -4.6A, de wjerstân is 47mΩ, it kanaal is Dual P-kanaal, en it pakket is DFN2X2-6L.

WINSOK MOSFET applikaasje gebieten

Bidireksjoneel blokkearjende switch; DC-DC konverzje applikaasjes; Li-batterij opladen; E-sigarette MOSFET, draadloze opladen MOSFET, auto opladen MOSFET, controller MOSFET, digitaal produkt MOSFET, lytse húshâldlike apparaten MOSFET, konsuminteelektronika MOSFET.

WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

PANJIT MOSFET PJQ2815

MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-boarne Voltage

-15

V

VGS

Gate-Boarne Voltage

±8

V

ID@Tc= 25 ℃

Continuous Drain Current, VGS= -4.5V1 

-4.6

A

IDM

300μS Pulsed Drain Current, (VGS= -4.5V)

-15

A

PD 

Power Dissipation Derating boppe TA = 25°C (Opmerking 2)

1.9

W

TSTG, TJ 

Storage Temperatur Range

-55 oant 150

RθJA

Thermal Resistance Junction-ambient1

65

℃/W

RθJC

Termyske Resistance Junction-Case1

50

℃/W

Elektryske skaaimerken (TJ = 25 ℃, útsein as oars oanjûn)

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

BVDSS 

Drain-Source Breakdown Voltage VGS= 0V, ikD= -250uA

-15

---

---

V

△BVDSS/△TJ

BVDSS temperatuer koëffisjint Ferwizing nei 25 ℃, ID= -1mA

---

-0.01

---

V/℃

RDS(ON)

Statyske Drain-Boarne On-resistance2  VGS=-4.5V, ID=-1A

---

47

61

VGS=-2.5V, ID=-1A

---

61

80

VGS=-1.8V, ID=-1A

---

90

150

VGS (de)

Gate Threshold Voltage VGS=VDS,ikD= -250uA

-0.4

-0.62

-1.2

V

△VGS(th) 

VGS(th)Temperatuer koëffisjint

---

3.13

---

mV/℃

IDSS

Drain-Boarne Leakage Current VDS=-10V, VGS=0V, TJ= 25 ℃

---

---

-1

uA

VDS=-10V, VGS=0V, TJ= 55℃

---

---

-5

IGSS

Gate-Boarne Leakage Current VGS=±12V , VDS= 0V

---

---

±100

nA

gfs

Forward Transconductance VDS=-5V, ID=-1A

---

10

---

S

Rg 

Gate Ferset VDS= 0V, VGS=0V, f=1MHz

---

2

---

Ω

Qg 

Totale Gate Charge (-4.5V)

VDS=-10V, VGS=-4.5V, ID=-4.6A

---

9.5

---

nC

Qgs 

Gate-Boarne Charge

---

1.4

---

Qgd 

Gate-Drain Charge

---

2.3

---

Td (oan)

Turn-On fertraging Tiid VDD=-10V,VGS=-4.5V , RG= 1Ω

ID=-3.9A,

---

15

---

ns

Tr 

Rise Tiid

---

16

---

Td (út)

Turn-Off fertraging Tiid

---

30

---

Tf 

Fall Tiid

---

10

---

Ciss 

Input Capacitance VDS=-10V, VGS=0V, f=1MHz

---

781

---

pF

Coss

Output Capacitance

---

98

---

Crss 

Reverse Transfer Capacitance

---

96

---


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