WSD45N10GDN56 N-kanaal 100V 45A DFN5X6-8 WINSOK MOSFET

produkten

WSD45N10GDN56 N-kanaal 100V 45A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD45N10GDN56

BVSS:100V

ID:45A

RDSON:14.5mΩ

Kanaal:N-kanaal

Pakket:DFN5X6-8


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD45N10GDN56 MOSFET is 100V, de stroom is 45A, de wjerstân is 14.5mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

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WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.

MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-Boarne Voltage

100

V

VGS

Gate-Source Spanning

±20

V

ID@TC=25

Continuous Drain Current, VGS@10V

45

A

ID@TC=100

Continuous Drain Current, VGS@10V

33

A

ID@TA=25

Continuous Drain Current, VGS@10V

12

A

ID@TA=70

Continuous Drain Current, VGS@10V

9.6

A

IDMa

Pulsearre Drain Strom

130

A

EASb

Single Pulse Avalanche Energy

169

mJ

IASb

Avalanche Aktueel

26

A

PD@TC=25

Totale Power Dissipation

95

W

PD@TA=25

Totale Power Dissipation

5.0

W

TSTG

Storage Temperatur Range

-55 oant 150

TJ

Operating Junction temperatuerberik

-55 oant 150

 

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

BVDSS

Drain-Source Breakdown Voltage VGS= 0V, ikD= 250uA

100

---

---

V

BVDS/△TJ

BVDSS temperatuer koëffisjint Ferwizing nei 25,ikD= 1 mA

---

0.0

---

V/

RDS(ON)d

Statyske Drain-Boarne On-resistance2 VGS= 10V, ID= 26A

---

14.5

17.5

mΩ

VGS (de)

Gate Threshold Voltage VGS=VDS,ikD= 250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Temperatuer koëffisjint

---

-5   mV/

IDSS

Drain-Boarne Leakage Current VDS= 80V, VGS= 0V, TJ=25

---

- 1

uA

VDS= 80V, VGS= 0V, TJ=55

---

- 30

IGSS

Gate-Boarne Leakage Current VGS=±20 v,vDS= 0V

---

- ±100

nA

Rge

Gate Ferset VDS= 0V, VGS=0V, f=1MHz

---

1.0

---

Ω

Qge

Totale Gate Charge (10V) VDS= 50V, VGS= 10V, ID= 26A

---

42

59

nC

Qgse

Gate-Boarne Charge

---

12

--

Qgde

Gate-Drain Charge

---

12

---

Td (oan)e

Turn-On fertraging Tiid VDD= 30V, VGEN= 10V, RG=6Ω

ID=1A,RL=30Ω

---

19

35

ns

Tre

Rise Tiid

---

9

17

Td (út)e

Turn-Off fertraging Tiid

---

36

65

Tfe

Fall Tiid

---

22

40

Cisse

Input Capacitance VDS= 30V, VGS=0V, f=1MHz

---

1800

---

pF

Cosse

Output Capacitance

---

215

---

Crsse

Reverse Transfer Capacitance

---

42

---


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