WSD6040DN56 N-kanaal 60V 36A DFN5X6-8 WINSOK MOSFET

produkten

WSD6040DN56 N-kanaal 60V 36A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD6040DN56

BVSS:60V

ID:36A

RDSON:14mΩ 

Kanaal:N-kanaal

Pakket:DFN5X6-8


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD6040DN56 MOSFET is 60V, de stroom is 36A, de wjerstân is 14mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

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WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.

MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-Boarne Voltage

60

V

VGS

Gate-Boarne Voltage

±20

V

ID

Trochrinnende Drain Strom TC=25°C

36

A

TC=100°C

22

ID

Trochrinnende Drain Strom TA=25°C

8.4

A

TA=100°C

6.8

IDMa

Pulsearre Drain Strom TC=25°C

140

A

PD

Maksimum Power Dissipation TC=25°C

37.8

W

TC=100°C

15.1

PD

Maksimum Power Dissipation TA=25°C

2.08

W

TA=70°C

1.33

IAS c

Avalanche Strom, Single puls

L=0,5mH

16

A

EASc

Single Pulse Avalanche Energy

L=0,5mH

64

mJ

IS

Diode Continuous Foarút Strom

TC=25°C

18

A

TJ

Maksimum Junction Temperatuer

150

TSTG

Storage Temperatur Range

-55 oant 150

RθJAb

Thermal Resistance Junction nei ambient

Steady State

60

/W

RθJC

Termyske ferset-knooppunt nei saak

Steady State

3.3

/W

 

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

Statysk        

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250μA

60    

V

IDSS

Zero Gate Voltage Drain Strom

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ=85°C

   

30

IGSS

Gate Leakage Aktuele

VGS = ± 20V, VDS = 0V

    ±100

nA

Op skaaimerken        

VGS(TH)

Gate Threshold Voltage

VGS = VDS, IDS = 250µA

1

1.6

2.5

V

RDS (oan)d

Drain-Boarne On-state Resistance

VGS = 10V, ID = 25A

  14 17.5

VGS = 4.5V, ID = 20A

  19

22

Switching        

Qg

Totale Gate Charge

VDS=30V

VGS=10V

ID=25A

  42  

nC

Qgs

Gate-Sour Charge  

6.4

 

nC

Qgd

Gate-Drain Charge  

9.6

 

nC

td (oan)

Ynskeakelje fertraging Tiid

VGEN=10V

VDD=30V

ID=1A

RG=6Ω

RL=30Ω

  17  

ns

tr

Ynskeakelje Rise Tiid  

9

 

ns

td (út)

Turn-off Delay Tiid   58  

ns

tf

Turn-off Fall Tiid   14  

ns

Rg

Gat ferset

VGS=0V, VDS=0V, f=1MHz

 

1.5

 

Ω

Dynamic        

Ciss

Yn kapasiteit

VGS=0V

VDS=30V f=1MHz

 

2100

 

pF

Coss

Out Capacitance   140  

pF

Crss

Reverse Transfer Capacitance   100  

pF

Drain-boarne Diode Skaaimerken en maksimale wurdearrings        

IS

Trochrinnende Boarne Strom

VG=VD=0V , Force Strom

   

18

A

ISM

Pulsearre boarne Aktueel 3    

35

A

VSDd

Diode Forward Voltage

ISD = 20A, VGS = 0V

 

0.8

1.3

V

trr

Reverse Recovery Tiid

ISD= 25A, dlSD/dt=100A/µs

  27  

ns

Qrr

Reverse Recovery Charge   33  

nC


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