WSD6040DN56 N-kanaal 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET produkt oersjoch
De spanning fan WSD6040DN56 MOSFET is 60V, de stroom is 36A, de wjerstân is 14mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.
WINSOK MOSFET applikaasje gebieten
E-sigaretten MOSFET, draadloze opladen MOSFET, motors MOSFET, drones MOSFET, medyske soarch MOSFET, autoladers MOSFET, controllers MOSFET, digitale produkten MOSFET, lytse húshâldlike apparaten MOSFET, konsumintelektronika MOSFET.
WINSOK MOSFET komt oerien mei oare merk materiaal nûmers
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET parameters
| Symboal | Parameter | Wurdearring | Units | ||
| VDS | Drain-boarne Voltage | 60 | V | ||
| VGS | Gate-Boarne Voltage | ±20 | V | ||
| ID | Trochrinnende Drain Strom | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Trochrinnende Drain Strom | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Pulsearre Drain Strom | TC=25°C | 140 | A | |
| PD | Maksimum Power Dissipation | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Maksimum Power Dissipation | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche Strom, Single puls | L=0,5mH | 16 | A | |
| EASc | Single Pulse Avalanche Energy | L=0,5mH | 64 | mJ | |
| IS | Diode Continuous Foarút Strom | TC=25°C | 18 | A | |
| TJ | Maksimum Junction Temperatuer | 150 | ℃ | ||
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ | ||
| RθJAb | Thermal Resistance Junction nei ambient | Steady State | 60 | ℃/W | |
| RθJC | Thermal Resistance-Junction to Case | Steady State | 3.3 | ℃/W | |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid | |
| Statysk | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Strom | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate Leakage Aktuele | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Op skaaimerken | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS (oan)d | Drain-Boarne On-state Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Switching | |||||||
| Qg | Totale Gate Charge | VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | Gate-Sour Charge | 6.4 | nC | ||||
| Qgd | Gate-Drain Charge | 9.6 | nC | ||||
| td (oan) | Ynskeakelje fertraging Tiid | VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Ynskeakelje Rise Tiid | 9 | ns | ||||
| td (út) | Turn-off Delay Tiid | 58 | ns | ||||
| tf | Útskeakelje Fall Tiid | 14 | ns | ||||
| Rg | Gat ferset | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Dynamic | |||||||
| Ciss | Yn kapasiteit | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Out Capacitance | 140 | pF | ||||
| Crss | Reverse Transfer Capacitance | 100 | pF | ||||
| Drain-boarne Diode Skaaimerken en maksimale wurdearrings | |||||||
| IS | Trochrinnende Boarne Strom | VG=VD=0V , Force Strom | 18 | A | |||
| ISM | Pulsearre boarne Aktueel 3 | 35 | A | ||||
| VSDd | Diode Forward Voltage | ISD = 20A, VGS = 0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Tiid | ISD= 25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
