WSD6060DN56 N-kanaal 60V 65A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD6060DN56

BVSS:60V

ID:65A

RDSON:7,5mΩ

Kanaal:N-kanaal

Pakket:DFN5X6-8

Stjoer e-mail nei ús PDF

Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD6060DN56 MOSFET is 60V, de stroom is 65A, de wjerstân is 7.5mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

E-sigaretten MOSFET, draadloze opladen MOSFET, motors MOSFET, drones MOSFET, medyske soarch MOSFET, autoladers MOSFET, controllers MOSFET, digitale produkten MOSFET, lytse húshâldlike apparaten MOSFET, konsumintelektronika MOSFET.

WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET parameters

Symboal	Parameter		Wurdearring	Ienheid
Common Wurdearrings
VDSS	Drain-boarne Voltage		60	V
VGSS	Gate-Boarne Voltage		±20	V
T_J	Maksimum Junction Temperatuer		150	°C
TSTG	Storage Temperatur Range		-55 oant 150	°C
I_S	Diode Continuous Foarút Strom	T_c=25°C	30	A
ID	Trochrinnende Drain Strom	T_c=25°C	65	A
ID	Trochrinnende Drain Strom	T_c=70°C	42	A
ik DM b	Pulse Drain Strom Tested	T_c=25°C	250	A
P_D	Maksimum Power Dissipation	T_c=25°C	62,5	W
P_D	Maksimum Power Dissipation	T_C=70°C	38	W
R_qJL	Thermal Resistance-Junction to Lead	Steady State	2.1	°C/W
RqJA	Termyske ferset-knooppunt nei Ambient	t £ 10s	45	°C/W
RqJA	Termyske ferset-knooppunt nei Ambient	Steady State^b	50	°C/W
IK AS^d	Avalanche Strom, Single puls	L=0,5mH	18	A
E AS d	Avalanche Energy, Single puls	L=0,5mH	81	mJ

Symboal	Parameter	Test Betingsten		Min.	Typ.	Max.	Ienheid
Statyske skaaimerken
BV_DSS	Drain-Source Breakdown Voltage	V_GS= 0V, ik_DS=250mA		60	-	-	V
IDSS	Zero Gate Voltage Drain Strom	V_DS= 48V, V_GS= 0V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Strom						mA
			T_J=85°C	-	-	30
VGS (de)	Gate Threshold Voltage	V_DS=V_GS,ik_DS=250mA		1.2	1.5	2.5	V
IGSS	Gate Leakage Aktuele	V_GS= ± 20V, V_DS= 0V		-	-	±100	nA
R DS(ON) 3	Drain-Boarne On-state Resistance	V_GS= 10V, ik_DS= 20A		-	7.5	10	m W
R DS(ON) 3	Drain-Boarne On-state Resistance	V_GS= 4.5V, I_DS= 15 A		-	10	15	m W
Diode Skaaimerken
V SD	Diode Forward Voltage	I_SD= 1A, V_GS= 0V		-	0,75	1.2	V
t_rr	Reverse Recovery Tiid	I_SD= 20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Reverse Recovery Charge	I_SD= 20A, dl_SD/dt=100A/µs		-	36	-	nC
Dynamyske skaaimerken^3,4
R_G	Gate Ferset	V_GS= 0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Input Capacitance	V_GS= 0V, V_DS= 30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Output Capacitance			-	270	-
C_rss	Reverse Transfer Capacitance			-	40	-
td(ON)	Ynskeakelje fertraging Tiid	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Ynskeakelje Rise Tiid			-	6	-
td (út)	Turn-off Delay Tiid			-	33	-
t_f	Útskeakelje Fall Tiid			-	30	-
Gate Charge Skaaimerken ^3,4
Q_g	Totale Gate Charge	V_DS= 30V, V_GS= 4.5V, I_DS= 20A		-	13	-	nC
Q_g	Totale Gate Charge	V_DS= 30V, V_GS= 10V, I_DS= 20A		-	27	-
Q_gth	Threshold Gate Charge			-	4.1	-
Q_gs	Gate-Boarne Charge			-	5	-
Q_gd	Gate-Drain Charge			-	4.2	-