WSD6060DN56 N-kanaal 60V 65A DFN5X6-8 WINSOK MOSFET

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Part nûmer:WSD6060DN56

BVSS:60V

ID:65A

RDSON:7,5mΩ

Kanaal:N-kanaal

Pakket:DFN5X6-8

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Produkt Detail

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Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD6060DN56 MOSFET is 60V, de stroom is 65A, de wjerstân is 7.5mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

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WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

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MOSFET parameters

Symboal	Parameter		Wurdearring	Ienheid
Common Wurdearrings
VDSS	Drain-Boarne Voltage		60	V
VGSS	Gate-Boarne Voltage		±20	V
T_J	Maksimum Junction Temperatuer		150	°C
TSTG	Storage Temperatur Range		-55 oant 150	°C
I_S	Diode Continuous Foarút Strom	T_c=25°C	30	A
ID	Trochrinnende Drain Strom	T_c=25°C	65	A
ID	Trochrinnende Drain Strom	T_c=70°C	42	A
ik DM b	Pulse Drain Current Tested	T_c=25°C	250	A
P_D	Maksimum Power Dissipation	T_c=25°C	62,5	W
P_D	Maksimum Power Dissipation	T_C=70°C	38	W
R_qJL	Thermal Resistance-Junction to Lead	Steady State	2.1	°C/W
RqJA	Termyske ferset-knooppunt nei Ambient	t £ 10s	45	°C/W
RqJA	Termyske ferset-knooppunt nei Ambient	Steady State^b	50	°C/W
IK AS^d	Avalanche Strom, Single puls	L=0,5mH	18	A
E AS d	Avalanche Energy, Single puls	L=0,5mH	81	mJ

Symboal	Parameter	Test Betingsten		Min.	Typ.	Max.	Ienheid
Statyske skaaimerken
BV_DSS	Drain-Source Breakdown Voltage	V_GS= 0V, ik_DS=250mA		60	-	-	V
IDSS	Zero Gate Voltage Drain Strom	V_DS= 48V, V_GS= 0V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Strom						mA
			T_J=85°C	-	-	30
VGS (de)	Gate Threshold Voltage	V_DS=V_GS,ik_DS=250mA		1.2	1.5	2.5	V
IGSS	Gate Leakage Aktuele	V_GS= ± 20V, V_DS= 0V		-	-	±100	nA
R DS(ON) 3	Drain-Boarne On-state Resistance	V_GS= 10V, ik_DS= 20A		-	7.5	10	m W
R DS(ON) 3	Drain-Boarne On-state Resistance	V_GS= 4.5V, I_DS= 15 A		-	10	15	m W
Diode Skaaimerken
V SD	Diode Forward Voltage	I_SD= 1A, V_GS= 0V		-	0,75	1.2	V
t_rr	Reverse Recovery Tiid	I_SD= 20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Reverse Recovery Charge	I_SD= 20A, dl_SD/dt=100A/µs		-	36	-	nC
Dynamyske skaaimerken^3,4
R_G	Gate Ferset	V_GS= 0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Input Capacitance	V_GS= 0V, V_DS= 30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Output Capacitance			-	270	-
C_rss	Reverse Transfer Capacitance			-	40	-
td(ON)	Ynskeakelje fertraging Tiid	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Ynskeakelje Rise Tiid			-	6	-
td (út)	Turn-off Delay Tiid			-	33	-
t_f	Turn-off Fall Tiid			-	30	-
Gate Charge Skaaimerken ^3,4
Q_g	Totale Gate Charge	V_DS= 30V, V_GS= 4.5V, I_DS= 20A		-	13	-	nC
Q_g	Totale Gate Charge	V_DS= 30V, V_GS= 10V, I_DS= 20A		-	27	-
Q_gth	Threshold Gate Charge			-	4.1	-
Q_gs	Gate-Boarne Charge			-	5	-
Q_gd	Gate-Drain Charge			-	4.2	-