WSD6070DN56 N-kanaal 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET produkt oersjoch
De spanning fan WSD6070DN56 MOSFET is 60V, de stroom is 80A, de wjerstân is 7.3mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.
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POTENS Semiconductor MOSFET PDC696X.
MOSFET parameters
| Symboal | Parameter | Wurdearring | Units |
| VDS | Drain-Boarne Voltage | 60 | V |
| VGS | Gate-Source Spanning | ±20 | V |
| TJ | Maksimum Junction Temperatuer | 150 | °C |
| ID | Storage Temperatur Range | -55 oant 150 | °C |
| IS | Diode Continuous Forward Current, TC=25°C | 80 | A |
| ID | Continuous Drain Current, VGS= 10V,TC=25°C | 80 | A |
| Continuous Drain Current, VGS= 10V,TC=100°C | 66 | A | |
| IDM | Pulsearre Drain Current, TC=25°C | 300 | A |
| PD | Maksimum krêftdissipaasje, TC=25°C | 150 | W |
| Maksimum krêftdissipaasje, TC=100°C | 75 | W | |
| RθJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 50 | °C/W |
| Termyske ferset-knooppunt nei Ambient, Steady State | 62,5 | °C/W | |
| RqJC | Termyske ferset-knooppunt nei saak | 1 | °C/W |
| IAS | Lawinestream, Single puls, L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single puls, L = 0.5mH | 225 | mJ |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDSS | Drain-Source Breakdown Voltage | VGS= 0V, ikD= 250uA | 60 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatuer koëffisjint | Ferwizing nei 25℃,ikD= 1 mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Statyske Drain-Boarne On-resistance2 | VGS=10V, ID= 40A | --- | 7.0 | 9.0 | mΩ |
| VGS (de) | Gate Threshold Voltage | VGS=VDS,ikD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (de) | VGS(th)Temperatuer koëffisjint | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS= 48V, VGS= 0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48V, VGS= 0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20 v,vDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ikD= 20A | --- | 50 | --- | S |
| Rg | Gate Ferset | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Totale Gate Charge (10V) | VDS= 30V, VGS= 10V, ID= 40A | --- | 48 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 17 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD= 30V, VGEN= 10V, RG=1Ω,ikD=1A,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Rise Tiid | --- | 10 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 40 | --- | ||
| Tf | Fall Tiid | --- | 35 | --- | ||
| Ciss | Input Capacitance | VDS= 30V, VGS=0V, f=1MHz | --- | 2680 | --- | pF |
| Coss | Output Capacitance | --- | 386 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 160 | --- |
