WSD6070DN56 N-kanaal 60V 80A DFN5X6-8 WINSOK MOSFET

produkten

WSD6070DN56 N-kanaal 60V 80A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD6070DN56

BVSS:60V

ID:80A

RDSON:7,3mΩ 

Kanaal:N-kanaal

Pakket:DFN5X6-8


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD6070DN56 MOSFET is 60V, de stroom is 80A, de wjerstân is 7.3mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

E-sigaretten MOSFET, draadloze opladen MOSFET, motors MOSFET, drones MOSFET, medyske soarch MOSFET, autoladers MOSFET, controllers MOSFET, digitale produkten MOSFET, lytse húshâldlike apparaten MOSFET, konsumintelektronika MOSFET.

WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

POTENS Semiconductor MOSFET PDC696X.

MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-boarne Voltage

60

V

VGS

Gate-Source Spanning

±20

V

TJ

Maksimum Junction Temperatuer

150

°C

ID

Storage Temperatur Range

-55 oant 150

°C

IS

Diode Continuous Forward Current, TC=25°C

80

A

ID

Continuous Drain Current, VGS= 10V,TC=25°C

80

A

Continuous Drain Current, VGS= 10V,TC=100°C

66

A

IDM

Pulsearre Drain Current, TC=25°C

300

A

PD

Maksimum krêftdissipaasje, TC=25°C

150

W

Maksimum krêftdissipaasje, TC=100°C

75

W

RθJA

Thermal Resistance-Junction to Ambient ,t =10s ̀

50

°C/W

Termyske ferset-knooppunt nei Ambient, Steady State

62,5

°C/W

RqJC

Thermal Resistance-Junction to Case

1

°C/W

IAS

Lawinestream, Single puls, L=0.5mH

30

A

EAS

Avalanche Energy, Single puls, L = 0.5mH

225

mJ

 

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

BVDSS

Drain-Source Breakdown Voltage VGS= 0V, ikD= 250uA

60

---

---

V

BVDS/△TJ

BVDSSTemperatuer koëffisjint Ferwizing nei 25,ikD= 1 mA

---

0.043

---

V/

RDS(ON)

Statyske Drain-Boarne On-resistance2 VGS=10V, ID= 40A

---

7.0

9.0

mΩ

VGS (de)

Gate Threshold Voltage VGS=VDS,ikD= 250uA

2.0

3.0

4.0

V

VGS (de)

VGS(th)Temperatuer koëffisjint

---

-6.94

---

mV/

IDSS

Drain-Boarne Leakage Current VDS= 48V, VGS= 0V, TJ=25

---

---

2

uA

VDS= 48V, VGS= 0V, TJ=55

---

---

10

IGSS

Gate-Boarne Leakage Current VGS=±20 v,vDS= 0V

---

---

±100

nA

gfs

Forward Transconductance VDS= 5V, ikD= 20A

---

50

---

S

Rg

Gate Ferset VDS= 0V, VGS=0V, f=1MHz

---

1.0

---

Ω

Qg

Totale Gate Charge (10V) VDS= 30V, VGS= 10V, ID= 40A

---

48

---

nC

Qgs

Gate-Boarne Charge

---

17

---

Qgd

Gate-Drain Charge

---

12

---

Td (oan)

Turn-On fertraging Tiid VDD= 30V, VGEN= 10V, RG=1Ω,ikD=1A,RL=15Ω.

---

16

---

ns

Tr

Tiid om op te stean

---

10

---

Td (út)

Turn-Off fertraging Tiid

---

40

---

Tf

Fall Tiid

---

35

---

Ciss

Input Capacitance VDS= 30V, VGS=0V, f=1MHz

---

2680

---

pF

Coss

Output Capacitance

---

386

---

Crss

Reverse Transfer Capacitance

---

160

---


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