WSD60N10GDN56 N-kanaal 100V 60A DFN5X6-8 WINSOK MOSFET

produkten

WSD60N10GDN56 N-kanaal 100V 60A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD60N10GDN56

BVSS:100V

ID:60A

RDSON:8,5mΩ

Kanaal:N-kanaal

Pakket:DFN5X6-8


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD60N10GDN56 MOSFET is 100V, de stroom is 60A, de wjerstân is 8.5mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

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MOSFET applikaasje fjildenWINSOK MOSFET komt oerien mei oare merk materiaal nûmers

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MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-boarne Voltage

100

V

VGS

Gate-Boarne Voltage

±20

V

ID@TC= 25 ℃

Trochrinnende Drain Strom

60

A

IDP

Pulsearre Drain Strom

210

A

EAS

Avalanche Energy, Single puls

100

mJ

PD@TC= 25 ℃

Totale Power Dissipation

125

W

TSTG

Storage Temperatur Range

-55 oant 150

TJ 

Operating Junction temperatuerberik

-55 oant 150

 

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

BVDSS 

Drain-Source Breakdown Voltage VGS= 0V, ikD= 250uA

100

---

---

V

  Statyske Drain-Boarne On-resistance VGS=10V,ID=10A.

---

8.5

10. 0

RDS(ON)

VGS=4.5V,ID=10A.

---

9.5

12. 0

VGS (de)

Gate Threshold Voltage VGS=VDS,ikD= 250uA

1.0

---

2.5

V

IDSS

Drain-Boarne Leakage Current VDS= 80V, VGS= 0V, TJ= 25 ℃

---

---

1

uA

IGSS

Gate-Boarne Leakage Current VGS=±20V , VDS= 0V

---

---

±100

nA

Qg 

Totale Gate Charge (10V) VDS= 50V, VGS= 10V, ID= 25A

---

49,9

---

nC

Qgs 

Gate-Boarne Charge

---

6.5

---

Qgd 

Gate-Drain Charge

---

12.4

---

Td (oan)

Turn-On fertraging Tiid VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A

---

20.6

---

ns

Tr 

Tiid om op te stean

---

5

---

Td (út)

Turn-Off fertraging Tiid

---

51.8

---

Tf 

Fall Tiid

---

9

---

Ciss 

Input Capacitance VDS= 50V, VGS=0V, f=1MHz

---

2604

---

pF

Coss

Output Capacitance

---

362

---

Crss 

Reverse Transfer Capacitance

---

6.5

---

IS 

Trochrinnende Boarne Strom VG=VD= 0V , krêftstroom

---

---

60

A

ISP

Pulsed Boarne Aktueel

---

---

210

A

VSD

Diode Forward Voltage VGS= 0V, ikS=12A, TJ= 25 ℃

---

---

1.3

V

trr 

Reverse Recovery Tiid IF=12A,dI/dt=100A/µs,TJ= 25 ℃

---

60.4

---

nS

Qrr 

Reverse Recovery Charge

---

106.1

---

nC


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