WSD75100DN56 N-kanaal 75V 100A DFN5X6-8 WINSOK MOSFET

produkten

WSD75100DN56 N-kanaal 75V 100A DFN5X6-8 WINSOK MOSFET

koarte beskriuwing:

Part nûmer:WSD75100DN56

BVSS:75V

ID:100A

RDSON:5,3mΩ 

Kanaal:N-kanaal

Pakket:DFN5X6-8


Produkt Detail

Oanfraach

Produkt Tags

WINSOK MOSFET produkt oersjoch

De spanning fan WSD75100DN56 MOSFET is 75V, de stroom is 100A, de wjerstân is 5.3mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.

WINSOK MOSFET applikaasje gebieten

E-sigaretten MOSFET, draadloze opladen MOSFET, drones MOSFET, medyske soarch MOSFET, autoladers MOSFET, controllers MOSFET, digitale produkten MOSFET, lytse húshâldlike apparaten MOSFET, konsuminteelektronika MOSFET.

WINSOK MOSFET komt oerien mei oare merk materiaal nûmers

AOS MOSFET AON6276. .

MOSFET parameters

Symboal

Parameter

Wurdearring

Units

VDS

Drain-boarne Voltage

75

V

VGS

Gate-Source Spanning

±25

V

TJ

Maksimum Junction Temperatuer

150

°C

ID

Storage Temperatur Range

-55 oant 150

°C

IS

Diode Continuous Forward Current, TC=25°C

50

A

ID

Continuous Drain Current, VGS= 10V,TC=25°C

100

A

Continuous Drain Current, VGS= 10V,TC=100°C

73

A

IDM

Pulsearre Drain Current, TC=25°C

400

A

PD

Maksimum krêftdissipaasje, TC=25°C

155

W

Maksimum krêftdissipaasje, TC=100°C

62

W

RθJA

Thermal Resistance-Junction to Ambient ,t =10s ̀

20

°C

Termyske ferset-knooppunt nei Ambient, Steady State

60

°C

RqJC

Thermal Resistance-Junction to Case

0.8

°C

IAS

Lawinestream, Single puls, L=0.5mH

30

A

EAS

Avalanche Energy, Single puls, L = 0.5mH

225

mJ

 

Symboal

Parameter

Betingsten

Min.

Typ.

Max.

Ienheid

BVDSS

Drain-Source Breakdown Voltage VGS= 0V, ikD= 250uA

75

---

---

V

BVDS/△TJ

BVDSSTemperatuer koëffisjint Ferwizing nei 25,ikD= 1 mA

---

0.043

---

V/

RDS(ON)

Statyske Drain-Boarne On-resistance2 VGS=10V, ID= 25A

---

5.3

6.4

mΩ

VGS (de)

Gate Threshold Voltage VGS=VDS,ikD= 250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Temperatuer koëffisjint

---

-6.94

---

mV/

IDSS

Drain-Boarne Leakage Current VDS= 48V, VGS= 0V, TJ=25

---

---

2

uA

VDS= 48V, VGS= 0V, TJ=55

---

---

10

IGSS

Gate-Boarne Leakage Current VGS=±20 v,vDS= 0V

---

---

±100

nA

gfs

Forward Transconductance VDS= 5V, ikD= 20A

---

50

---

S

Rg

Gate Ferset VDS= 0V, VGS=0V, f=1MHz

---

1.0

2

Ω

Qg

Totale Gate Charge (10V) VDS= 20V, VGS= 10V, ID= 40A

---

65

85

nC

Qgs

Gate-Boarne Charge

---

20

---

Qgd

Gate-Drain Charge

---

17

---

Td (oan)

Turn-On fertraging Tiid VDD= 30V, VGEN= 10V, RG=1Ω,ikD=1A,RL=15Ω.

---

27

49

ns

Tr

Tiid om op te stean

---

14

26

Td (út)

Turn-Off fertraging Tiid

---

60

108

Tf

Fall Tiid

---

37

67

Ciss

Input Capacitance VDS= 20V, VGS=0V, f=1MHz

3450

3500 4550

pF

Coss

Output Capacitance

245

395

652

Crss

Reverse Transfer Capacitance

100

195

250


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