WSD75N12GDN56 N-kanaal 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET produkt oersjoch
De spanning fan WSD75N12GDN56 MOSFET is 120V, de stroom is 75A, de wjerstân is 6mΩ, it kanaal is N-kanaal, en it pakket is DFN5X6-8.
WINSOK MOSFET applikaasje gebieten
Medyske apparatuer MOSFET, drones MOSFET, PD macht foarrieden MOSFET, LED macht foarrieden MOSFET, yndustriële apparatuer MOSFET.
MOSFET applikaasje fjildenWINSOK MOSFET komt oerien mei oare merk materiaal nûmers
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parameters
| Symboal | Parameter | Wurdearring | Units |
| VDSS | Drain-to-Source Voltage | 120 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | 1 Trochrinnende drainstream (Tc = 25 ℃) | 75 | A |
| ID | 1 Trochrinnende drainstream (Tc = 70 ℃) | 70 | A |
| IDM | Pulsearre Drain Strom | 320 | A |
| IAR | Single puls lawinestrom | 40 | A |
| EASa | Single puls lawine enerzjy | 240 | mJ |
| PD | Power Dissipation | 125 | W |
| TJ, Tstg | Operating Junction en Storage Temperatur Range | -55 oant 150 | ℃ |
| TL | Maksimum temperatuer foar soldering | 260 | ℃ |
| RθJC | Termyske ferset, Junction-to-Case | 1.0 | ℃/W |
| RθJA | Termyske ferset, Junction-to-Ambient | 50 | ℃/W |
| Symboal | Parameter | Test Betingsten | Min. | Typ. | Max. | Units |
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Drain to Source Leakage Current | VDS = 120V, VGS = 0V | -- | -- | 1 | µA |
| IGSS(F) | Poarte nei Boarne Forward Leakage | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Poarte nei boarne Reverse Leakage | VGS = -20V | -- | -- | -100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON) 1 | Drain-to-Source On-resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Forward Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Input Capacitance | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Coss | Output Capacitance | -- | 429 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Gate ferset | -- | 2.5 | -- | Ω | |
| td(ON) | Ynskeakelje fertraging Tiid | ID =20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Rise Tiid | -- | 11 | -- | ns | |
| td(OFF) | Turn-Off fertraging Tiid | -- | 55 | -- | ns | |
| tf | Fall Tiid | -- | 28 | -- | ns | |
| Qg | Totale Gate Charge | VGS = 0~10V VDS = 50VID = 20A | -- | 61.4 | -- | nC |
| Qgs | Gate Boarne Charge | -- | 17.4 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 14.1 | -- | nC | |
| IS | Diode Foarút Strom | TC =25 °C | -- | -- | 100 | A |
| ISM | Diode Pulse Strom | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Reverse Recovery tiid | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 250 | -- | nC |
