WSF6012 N&P-kanaal 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET
Algemiene beskriuwing
De WSF6012 MOSFET is in apparaat mei hege prestaasjes mei in ûntwerp mei hege sellentichtens. It leveret poerbêste RDSON- en poartelading geskikt foar de measte syngroane buck-konverterapplikaasjes. Derneist foldocht it RoHS en Green Product easken, en komt mei 100% EAS garânsje foar folsleine funksjonaliteit en betrouberens.
Features
Avansearre trenchtechnology mei hege sellichte, superleech poartelading, poerbêste CdV / dt-effektôffal, 100% EAS-garânsje, en miljeufreonlike apparaatopsjes.
Applikaasjes
Heechfrekwinsje Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-sigaretten, draadloos opladen, motoren, needkrêftfoarsjenningen, drones, sûnenssoarch, autoladers, controllers, digitale apparaten, lytse húshâldlike apparaten, en konsuminteelektronika.
korrespondearjend materiaal nûmer
AOS AOD603A,
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units | |
| N-kanaal | P-kanaal | |||
| VDS | Drain-Boarne Voltage | 60 | -60 | V |
| VGS | Gate-Boarne Voltage | ±20 | ±20 | V |
| ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 20 | -15 | A |
| ID@TC=70℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 15 | -10 | A |
| IDM | Pulsearre Drain Strom 2 | 46 | -36 | A |
| EAS | Single Pulse Avalanche Energy3 | 200 | 180 | mJ |
| IAS | Avalanche Aktueel | 59 | -50 | A |
| PD@TC=25℃ | Totale krêftdissipaasje 4 | 34.7 | 34.7 | W |
| TSTG | Storage Temperatur Range | -55 oant 150 | -55 oant 150 | ℃ |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | -55 oant 150 | ℃ |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = 1mA | --- | 0.063 | --- | V/℃ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=10V, ID=8A | --- | 28 | 37 | mΩ |
| VGS=4.5V, ID=5A | --- | 37 | 45 | |||
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1 | --- | 2.5 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | -5.24 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=8A | --- | 21 | --- | S |
| Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 3.0 | 4.5 | Ω |
| Qg | Totale Gate Charge (4.5V) | VDS=48V, VGS=4.5V, ID=8A | --- | 12.6 | 20 | nC |
| Qgs | Gate-Boarne Charge | --- | 3.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 6.3 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=30V, VGS=4.5V, RG=3.3Ω, ID=1A | --- | 8 | --- | ns |
| Tr | Rise Tiid | --- | 14.2 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 24.6 | --- | ||
| Tf | Fall Tiid | --- | 4.6 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 670 | --- | pF |
| Coss | Output Capacitance | --- | 70 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 35 | --- |
