WSF70P02 P-kanaal -20V -70A TO-252 WINSOK MOSFET

WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET Featured Image

koarte beskriuwing:

Model Oantal:WSF70P02

BVSS:-20V

RDSON:6,8mΩ

ID:-70A

Kanaal:P-kanaal

Pakket:TO-252

Produkt Summery:De WSF70P02 MOSFET hat in spanning fan -20V, stroom fan -70A, wjerstân fan 6.8mΩ, in P-kanaal, en TO-252 ferpakking.

Applikaasjes:E-sigaretten, draadloze opladers, motoren, macht-backups, drones, sûnenssoarch, autoladers, controllers, elektroanika, apparaten en konsuminteguod.

Stjoer e-mail nei ús PDF

Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSF70P02 MOSFET is it topprestearjende P-kanaal trench-apparaat mei hege sellentichtens. It biedt treflike RDSON- en poartelading foar de measte applikaasjes foar syngroane buck-konverter. It apparaat foldocht oan de RoHS en Green Product easken, is 100% EAS garandearre, en is goedkard foar folsleine funksje betrouberens.

Features

Avansearre Trench Technology mei hege sel tichtens, super lege poarte lading, poerbêst reduksje yn CdV / dt effekt, in 100% EAS garânsje, en opsjes foar miljeufreonlike apparaten.

Applikaasjes

Heechfrekwinsje Point-of-Load Synchronous, Buck Converter foar MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-sigaretten, draadloos opladen, motoren, needkrêftfoarsjenningen, drones, medyske soarch, autoladers , controllers, digitale produkten, lytse húshâldlike apparaten, konsumint elektroanika.

korrespondearjend materiaal nûmer

AOS

Wichtige parameters

Symboal	Parameter	Wurdearring		Units
		10s	Steady State
VDS	Drain-Boarne Voltage	-20		V
VGS	Gate-Boarne Voltage	±12		V
ID@TC=25℃	Trochrinnende Drain Strom, VGS @ -10V1	-70		A
ID@TC=100℃	Trochrinnende Drain Strom, VGS @ -10V1	-36		A
IDM	Pulsearre Drain Strom 2	-200		A
EAS	Single Pulse Avalanche Energy3	360		mJ
IAS	Avalanche Aktueel	-55.4		A
PD@TC=25℃	Totale krêftdissipaasje 4	80		W
TSTG	Storage Temperatur Range	-55 oant 150		℃
TJ	Operating Junction temperatuerberik	-55 oant 150		℃

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS temperatuer koëffisjint	Referinsje nei 25 ℃, ID = -1mA	---	-0.018	---	V/℃
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=-4.5V, ID=-15A	---	6.8	9.0	mΩ
RDS(ON)	Statyske drain-boarne On-resistance2					mΩ
		VGS=-2.5V, ID=-10A	---	8.2	11
VGS (de)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-0.4	-0.6	-1.2	V
		VGS=VDS, ID =-250uA
△VGS(th)	VGS (th) temperatuer koëffisjint		---	2.94	---	mV/℃
IDSS	Drain-Boarne Leakage Current	VDS=-20V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Boarne Leakage Current					uA
		VDS=-20V, VGS=0V, TJ=55℃	---	---	5
IGSS	Gate-Boarne Leakage Current	VGS=±12V, VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V, ID=-10A	---	45	---	S
Qg	Totale Gate Charge (-4.5V)	VDS=-15V, VGS=-4.5V, ID=-10A	---	63	---	nC
Qgs	Gate-Boarne Charge		---	9.1	---
Qgd	Gate-Drain Charge		---	13	---
Td (oan)	Turn-On fertraging Tiid	VDD=-10V, VGS=-4.5V, RG=3.3Ω, ID=-10A	---	16	---	ns
Tr	Rise Tiid		---	77	---
Td (út)	Turn-Off fertraging Tiid		---	195	---
Tf	Fall Tiid		---	186	---
Ciss	Input Capacitance	VDS=-10V, VGS=0V, f=1MHz	---	5783	---	pF
Coss	Output Capacitance		---	520	---
Crss	Reverse Transfer Capacitance		---	445	---