WSF70P02 P-kanaal -20V -70A TO-252 WINSOK MOSFET
Algemiene beskriuwing
De WSF70P02 MOSFET is it topprestearjende P-kanaal trench-apparaat mei hege sellentichtens. It biedt treflike RDSON- en poartelading foar de measte syngroane buck-konverterapplikaasjes. It apparaat foldocht oan de RoHS en Green Product easken, is 100% EAS garandearre, en is goedkard foar folsleine funksje betrouberens.
Features
Avansearre Trench Technology mei hege sel tichtens, super lege poarte lading, poerbêst reduksje yn CdV / dt effekt, in 100% EAS garânsje, en opsjes foar miljeufreonlike apparaten.
Applikaasjes
Heechfrekwinsje Point-of-Load Synchronous, Buck Converter foar MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-sigaretten, draadloos opladen, motoren, needkrêftfoarsjenningen, drones, medyske soarch, autoladers , controllers, digitale produkten, lytse húshâldlike apparaten, konsumint elektroanika.
korrespondearjend materiaal nûmer
AOS
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units | |
| 10s | Steady State | |||
| VDS | Drain-boarne Voltage | -20 | V | |
| VGS | Gate-Boarne Voltage | ±12 | V | |
| ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ -10V1 | -70 | A | |
| ID@TC=100℃ | Trochrinnende Drain Strom, VGS @ -10V1 | -36 | A | |
| IDM | Pulsearre Drain Strom 2 | -200 | A | |
| EAS | Single Pulse Avalanche Energy3 | 360 | mJ | |
| IAS | Avalanche Aktueel | -55.4 | A | |
| PD@TC=25℃ | Totale krêftdissipaasje 4 | 80 | W | |
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ | |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | ℃ | |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = -1mA | --- | -0.018 | --- | V/℃ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=-4.5V, ID=-15A | --- | 6.8 | 9.0 | mΩ |
| VGS=-2.5V, ID=-10A | --- | 8.2 | 11 | |||
| VGS (de) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.4 | -0.6 | -1.2 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | 2.94 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=-20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-20V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±12V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-10A | --- | 45 | --- | S |
| Qg | Totale Gate Charge (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-10A | --- | 63 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 9.1 | --- | ||
| Qgd | Gate-Drain Charge | --- | 13 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=-10V, VGS=-4.5V, RG=3.3Ω, ID=-10A | --- | 16 | --- | ns |
| Tr | Rise Tiid | --- | 77 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 195 | --- | ||
| Tf | Fall Tiid | --- | 186 | --- | ||
| Ciss | Input Capacitance | VDS=-10V, VGS=0V, f=1MHz | --- | 5783 | --- | pF |
| Coss | Output Capacitance | --- | 520 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 445 | --- |
