WSM320N04G N-kanaal 40V 320A TOLL-8L WINSOK MOSFET
Algemiene beskriuwing
De WSM320N04G is in MOSFET mei hege prestaasjes dy't in sleufûntwerp brûkt en in heul hege sellentichtens hat. It hat poerbêste RDSON en poarte lading en is geskikt foar de measte syngroane buck converter applikaasjes. De WSM320N04G foldocht oan RoHS- en Green Product-easken en wurdt garandearre om 100% EAS en folsleine funksjonele betrouberens te hawwen.
Features
Avansearre hege sel tichtens Trench technology, wylst ek mei in lege poarte lading foar optimale prestaasjes. Derneist hat it in poerbêste CdV / dt-effektferfal, in 100% EAS-garânsje en in miljeufreonlike opsje.
Applikaasjes
Heechfrekwinsje Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power Tool Applikaasje, Elektroanyske sigaretten, draadloze opladen, drones, medysk, auto-opladen, controllers, digitale produkten, lytse húshâldlike apparaten, en konsuminteelektronika.
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units | |
| VDS | Drain-Boarne Voltage | 40 | V | |
| VGS | Gate-Boarne Voltage | ±20 | V | |
| ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ 10V1,7 | 320 | A | |
| ID@TC=100℃ | Trochrinnende Drain Strom, VGS @ 10V1,7 | 192 | A | |
| IDM | Pulsearre Drain Strom 2 | 900 | A | |
| EAS | Single Pulse Avalanche Energy3 | 980 | mJ | |
| IAS | Avalanche Aktueel | 70 | A | |
| PD@TC=25℃ | Totale krêftdissipaasje 4 | 250 | W | |
| TSTG | Storage Temperatur Range | -55 oant 175 | ℃ | |
| TJ | Operating Junction temperatuerberik | -55 oant 175 | ℃ |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = 1mA | --- | 0.050 | --- | V/℃ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=10V, ID=25A | --- | 1.2 | 1.5 | mΩ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=4.5V, ID=20A | --- | 1.7 | 2.5 | mΩ |
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.6 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=40V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=40V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=50A | --- | 160 | --- | S |
| Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Totale Gate Charge (10V) | VDS=20V, VGS=10V, ID=25A | --- | 130 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 43 | --- | ||
| Qgd | Gate-Drain Charge | --- | 83 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=20V, VGEN=4.5V, RG=2.7Ω, ID=1A. | --- | 30 | --- | ns |
| Tr | Rise Tiid | --- | 115 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 95 | --- | ||
| Tf | Fall Tiid | --- | 80 | --- | ||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | --- | 8100 | --- | pF |
| Coss | Output Capacitance | --- | 1200 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 800 | --- |
