WSM340N10G N-kanaal 100V 340A TOLL-8L WINSOK MOSFET
Algemiene beskriuwing
De WSM340N10G is de N-Ch MOSFET-sleuf mei heechste prestaasjes mei ekstreem hege seltichtens, dy't poerbêste RDSON- en poartelading leverje foar de measte syngroane buck-konverterapplikaasjes. De WSM340N10G foldogge oan de RoHS en Green Product eask, 100% EAS garandearre mei folsleine funksje betrouberens goedkard.
Features
Avansearre Trench-technology mei hege sel tichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Grien apparaat beskikber.
Applikaasjes
Synchronous rectification, DC / DC Converter, Load Switch, Medyske apparatuer, drones, PD macht foarrieden, LED macht foarrieden, yndustriële apparatuer, ensfh
Wichtige parameters
Absolute maksimale wurdearrings
| Symboal | Parameter | Wurdearring | Units |
| VDS | Drain-Boarne Voltage | 100 | V |
| VGS | Gate-Boarne Voltage | ±20 | V |
| ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ 10V | 340 | A |
| ID@TC=100℃ | Trochrinnende Drain Strom, VGS @ 10V | 230 | A |
| IDM | Pulsearre Drain Current..TC=25°C | 1150 | A |
| EAS | Avalanche Energy, Single puls, L = 0.5mH | 1800 | mJ |
| IAS | Lawinestream, Single puls, L=0.5mH | 120 | A |
| PD@TC=25℃ | Totale Power Dissipation | 375 | W |
| PD@TC=100℃ | Totale Power Dissipation | 187 | W |
| TSTG | Storage Temperatur Range | -55 oant 175 | ℃ |
| TJ | Operating Junction temperatuerberik | 175 | ℃ |
Elektryske skaaimerken (TJ = 25 ℃, útsein as oars oanjûn)
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = 1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Statyske Drain-Boarne On-resistance | VGS=10V,ID=50A | --- | 1.6 | 2.3 | mΩ |
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=85V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±25V, VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Totale Gate Charge (10V) | VDS=50V, VGS=10V, ID=50A | --- | 260 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 80 | --- | ||
| Qgd | Gate-Drain Charge | --- | 60 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=50V, VGS=10V,RG=1Ω,RL=1Ω,IDS=1A. | --- | 88 | --- | ns |
| Tr | Rise Tiid | --- | 50 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 228 | --- | ||
| Tf | Fall Tiid | --- | 322 | --- | ||
| Ciss | Input Capacitance | VDS=40V, VGS=0V, f=1MHz | --- | 13900 | --- | pF |
| Coss | Output Capacitance | --- | 6160 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 220 | --- |
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