WSM340N10G N-kanaal 100V 340A TOLL-8L WINSOK MOSFET

koarte beskriuwing:

Model Oantal:WSM340N10G

BVSS:100V

RDSON:1.6mΩ

ID:340A

Kanaal:N-kanaal

Pakket:TOLL-8L

Produkt Summery:De spanning fan WSM340N10G MOSFET is 100V, de stroom is 340A, de wjerstân is 1.6mΩ, it kanaal is N-kanaal, en it pakket is TOLL-8L.

Applikaasjes:Medyske apparatuer, drones, PD-krêftfoarsjenningen, LED-krêftfoarsjenningen, yndustriële apparatuer, ensfh.

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Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSM340N10G is de N-Ch MOSFET-sleuf mei heechste prestaasjes mei ekstreem hege seltichtens, dy't poerbêste RDSON- en poartelading leverje foar de measte syngroane buck-konverterapplikaasjes. De WSM340N10G foldogge oan de RoHS en Green Product eask, 100% EAS garandearre mei folsleine funksje betrouberens goedkard.

Features

Avansearre Trench-technology mei hege sel tichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Grien apparaat beskikber.

Applikaasjes

Synchronous rectification, DC / DC Converter, Load Switch, Medyske apparatuer, drones, PD macht foarrieden, LED macht foarrieden, yndustriële apparatuer, ensfh

Wichtige parameters

Absolute maksimale wurdearrings

Symboal	Parameter	Wurdearring	Units
VDS	Drain-boarne Voltage	100	V
VGS	Gate-Boarne Voltage	±20	V
ID@TC=25℃	Trochrinnende Drain Strom, VGS @ 10V	340	A
ID@TC=100℃	Trochrinnende Drain Strom, VGS @ 10V	230	A
IDM	Pulsearre Drain Current..TC=25°C	1150	A
EAS	Avalanche Energy, Single puls, L = 0.5mH	1800	mJ
IAS	Lawinestream, Single puls, L=0.5mH	120	A
PD@TC=25℃	Totale Power Dissipation	375	W
PD@TC=100℃	Totale Power Dissipation	187	W
TSTG	Storage Temperatur Range	-55 oant 175	℃
TJ	Operating Junction temperatuerberik	175	℃

Elektryske skaaimerken (TJ = 25 ℃, útsein as oars oanjûn)

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=250uA	100	---	---	V
△BVDSS/△TJ	BVDSS temperatuer koëffisjint	Referinsje nei 25 ℃, ID = 1mA	---	0.096	---	V/℃
RDS(ON)	Statyske Drain-Boarne On-resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS (de)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS (th) temperatuer koëffisjint	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Boarne Leakage Current	VDS=85V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Boarne Leakage Current	VDS=85V, VGS=0V, TJ=55℃	---	---	10	uA
IGSS	Gate-Boarne Leakage Current	VGS=±25V, VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V, VGS=0V, f=1MHz	---	1.0	---	Ω
Qg	Totale Gate Charge (10V)	VDS=50V, VGS=10V, ID=50A	---	260	---	nC
Qgs	Gate-Boarne Charge		---	80	---
Qgd	Gate-Drain Charge		---	60	---
Td (oan)	Turn-On fertraging Tiid	VDD=50V, VGS=10V,RG=1Ω,RL=1Ω,IDS=1A.	---	88	---	ns
Tr	Rise Tiid		---	50	---
Td (út)	Turn-Off fertraging Tiid		---	228	---
Tf	Fall Tiid		---	322	---
Ciss	Input Capacitance	VDS=40V, VGS=0V, f=1MHz	---	13900	---	pF
Coss	Output Capacitance		---	6160	---
Crss	Reverse Transfer Capacitance		---	220	---