WSP4016 N-kanaal 40V 15.5A SOP-8 WINSOK MOSFET
Algemiene beskriuwing
De WSP4016 is de N-ch MOSFET-sleuf mei de heechste prestaasjes mei ekstreem hege sellentichtens, dy't poerbêste RDSON- en poarteladingen leverje foar de measte syngroane buck-konverterapplikaasjes. De WSP4016 foldogge oan de RoHS en Green Product eask, 100% EAS garandearre mei folsleine funksje betrouberens goedkard.
Features
Avansearre Trench-technology mei hege sel tichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Grien apparaat beskikber.
Applikaasjes
Wite LED boost converters, Automotive Systems, Yndustriële DC / DC Conversion Circuits, EAutomotive elektroanika, LED ljochten, audio, digitale produkten, lytse húshâldlike apparaten, konsumint elektroanika, beskerming boards, ensfh
korrespondearjend materiaal nûmer
AO AOSP66406, ON FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units |
| VDS | Drain-Boarne Voltage | 40 | V |
| VGS | Gate-Boarne Voltage | ±20 | V |
| ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 15.5 | A |
| ID@TC=70℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 8.4 | A |
| IDM | Pulsearre Drain Strom 2 | 30 | A |
| PD@TA=25℃ | Totale Power Dissipation TA = 25 ° C | 2.08 | W |
| PD@TA=70℃ | Totale Power Dissipation TA = 70 ° C | 1.3 | W |
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | ℃ |
Elektryske skaaimerken (TJ = 25 ℃, útsein as oars oanjûn)
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=10V, ID=7A | --- | 8.5 | 11.5 | mΩ |
| VGS=4.5V, ID=5A | --- | 11 | 14.5 | |||
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| IDSS | Drain-Boarne Leakage Current | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 25 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=15A | --- | 31 | --- | S |
| Qg | Totale Gate Charge (4.5V) | VDS=20V, VGS=10V, ID=7A | --- | 20 | 30 | nC |
| Qgs | Gate-Boarne Charge | --- | 3.9 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=20V,VGEN=10V,RG=1Ω, ID=1A, RL=20Ω. | --- | 12.6 | --- | ns |
| Tr | Rise Tiid | --- | 10 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 23.6 | --- | ||
| Tf | Fall Tiid | --- | 6 | --- | ||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | --- | 1125 | --- | pF |
| Coss | Output Capacitance | --- | 132 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 70 | --- |
Opmerking:
1.Pulstest: PW<= 300 us duty cycle<= 2%.
2.Guaranteed by design, net ûnderwerp fan produksje testen.
