WSP4016 N-kanaal 40V 15.5A SOP-8 WINSOK MOSFET

koarte beskriuwing:

Model nûmer:WSP4016

BVSS:40V

RDSON:11.5mΩ

ID:15.5A

Kanaal:N-kanaal

Pakket:SOP-8

Produkt Summery:De spanning fan WSP4016 MOSFET is 40V, de stroom is 15.5A, de wjerstân is 11.5mΩ, it kanaal is N-kanaal, en it pakket is SOP-8.

Oanfraach:Autoelektronika, LED-ljochten, audio, digitale produkten, lytse húshâldlike apparaten, konsuminteelektronika, beskermingsboerden, ensfh.

Stjoer e-mail nei ús PDF

Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSP4016 is de N-ch MOSFET mei de heechste prestaasje mei ekstreem hege sellentichtens, dy't poerbêste RDSON- en poarteladingen leverje foar de measte syngroane buck-konverterapplikaasjes.De WSP4016 foldogge oan de RoHS en Green Product eask, 100% EAS garandearre mei folsleine funksje betrouberens goedkard.

Features

Avansearre Trench-technology mei hege sel tichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Grien apparaat beskikber.

Oanfraach

Wite LED boost converters, Automotive Systems, Yndustriële DC / DC Conversion Circuits, EAutomotive elektroanika, LED ljochten, audio, digitale produkten, lytse húshâldlike apparaten, konsumint elektroanika, beskerming boards, ensfh

korrespondearjend materiaal nûmer

AO AOSP66406, ON FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.

Wichtige parameters

Symboal	Parameter	Wurdearring	Units
VDS	Drain-boarne Voltage	40	V
VGS	Gate-Boarne Voltage	±20	V
ID@TC=25℃	Trochrinnende Drain Strom, VGS @ 10V1	15.5	A
ID@TC=70℃	Trochrinnende Drain Strom, VGS @ 10V1	8.4	A
IDM	Pulsearre Drain Strom 2	30	A
PD@TA=25℃	Totale Power Dissipation TA = 25 ° C	2.08	W
PD@TA=70℃	Totale Power Dissipation TA = 70 ° C	1.3	W
TSTG	Storage Temperatur Range	-55 oant 150	℃
TJ	Operating Junction temperatuerberik	-55 oant 150	℃

Elektryske skaaimerken (TJ = 25 ℃, útsein as oars oanjûn)

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=250uA	40	---	---	V
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=10V, ID=7A	---	8.5	11.5	mΩ
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=4.5V, ID=5A	---	11	14.5	mΩ
VGS (de)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.0	1.8	2.5	V
IDSS	Drain-Boarne Leakage Current	VDS=32V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Boarne Leakage Current	VDS=32V, VGS=0V, TJ=55℃	---	---	25	uA
IGSS	Gate-Boarne Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V, ID=15A	---	31	---	S
Qg	Totale Gate Charge (4.5V)	VDS=20V, VGS=10V, ID=7A	---	20	30	nC
Qgs	Gate-Boarne Charge		---	3.9	---
Qgd	Gate-Drain Charge		---	3	---
Td (oan)	Turn-On fertraging Tiid	VDD=20V, VGEN=10V,RG=1Ω, ID=1A, RL=20Ω.	---	12.6	---	ns
Tr	Tiid om op te stean		---	10	---
Td (út)	Turn-Off fertraging Tiid		---	23.6	---
Tf	Fall Tiid		---	6	---
Ciss	Input Capacitance	VDS=20V, VGS=0V, f=1MHz	---	1125	---	pF
Coss	Output Capacitance		---	132	---
Crss	Reverse Transfer Capacitance		---	70	---