WSP4088 N-kanaal 40V 11A SOP-8 WINSOK MOSFET
Algemiene beskriuwing
De WSP4088 is de N-kanaal MOSFET mei de heechste prestaasjes mei in heul hege seltichtens dy't poerbêste RDSON- en poartelading leveret foar de measte syngroane buck-konverterapplikaasjes. WSP4088 foldocht oan RoHS en griene produkt easken, 100% EAS garânsje, folsleine funksje betrouberens goedkard.
Features
Betrouber en robúst, loodfrij en griene apparaten beskikber
Applikaasjes
Strombehear yn buroblêdkompjûter as DC / DC-omrekkeners, Elektroanyske sigaretten, draadloze opladen, motoren, drones, medysk, auto-opladen, controllers, digitale produkten, lytse húshâldlike apparaten, konsuminteelektronika, ensfh.
korrespondearjend materiaal nûmer
AO AO4884 AO4882,ON FDS4672A,PANJIT PJL9424,DINTEK DTM4916 ensfh.
Wichtige parameters
Absolute maksimale wurdearrings (TA = 25 C, útsein as oars oanjûn)
| Symboal | Parameter | Wurdearring | Ienheid | |
| Common Wurdearrings | ||||
| VDSS | Drain-Boarne Voltage | 40 | V | |
| VGSS | Gate-Boarne Voltage | ±20 | ||
| TJ | Maksimum Junction Temperatuer | 150 | °C | |
| TSTG | Storage Temperatur Range | -55 oant 150 | ||
| IS | Diode Continuous Foarút Strom | TA=25°C | 2 | A |
| ID | Trochrinnende Drain Strom | TA=25°C | 11 | A |
| TA=70°C | 8.4 | |||
| IDM a | Pulsearre Drain Strom | TA=25°C | 30 | |
| PD | Maksimum Power Dissipation | TA=25°C | 2.08 | W |
| TA=70°C | 1.3 | |||
| RqJA | Termyske ferset-knooppunt nei Ambient | t £10s | 30 | °C/W |
| Steady State | 60 | |||
| RqJL | Thermal Resistance-Junction to Lead | Steady State | 20 | |
| IAS b | Avalanche Strom, Single puls | L=0,1mH | 23 | A |
| EAS b | Avalanche Energy, Single puls | L=0,1mH | 26 | mJ |
Opmerking a:Max. stroom wurdt beheind troch bonding wire.
Opmerking b:UIS hifke en puls breedte beheind troch maksimum junction temperatuer 150oC (begintemperatuer Tj = 25oC).
Elektryske skaaimerken (TA = 25 C, behalve as oars oanjûn)
| Symboal | Parameter | Test Betingsten | Min. | Typ. | Max. | Ienheid | |
| Statyske skaaimerken | |||||||
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250mA | 40 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Strom | VDS=32V, VGS=0V | - | - | 1 | mA | |
| TJ=85°C | - | - | 30 | ||||
| VGS (de) | Gate Threshold Voltage | VDS=VGS, IDS=250mA | 1.5 | 1.8 | 2.5 | V | |
| IGSS | Gate Leakage Aktuele | VGS=±20V, VDS=0V | - | - | ±100 | nA | |
| RDS(ON) c | Drain-Boarne On-state Resistance | VGS=10V, IDS=7A | - | 10.5 | 13 | mW | |
| TJ=125°C | - | 15.75 | - | ||||
| VGS=4.5V, IDS=5A | - | 12 | 16 | ||||
| Gfs | Forward Transconductance | VDS=5V, IDS=15A | - | 31 | - | S | |
| Diode Skaaimerken | |||||||
| VSD c | Diode Forward Voltage | ISD=10A, VGS=0V | - | 0.9 | 1.1 | V | |
| trr | Reverse Recovery Tiid | VDD=20V, ISD=10A, dlSD/dt=100A/ms | - | 15.2 | - | ns | |
| ta | Oplaadtiid | - | 9.4 | - | |||
| tb | Discharge Tiid | - | 5.8 | - | |||
| Qrr | Reverse Recovery Charge | - | 9.5 | - | nC | ||
| Dynamyske skaaimerken d | |||||||
| RG | Gate Ferset | VGS=0V,VDS=0V,F=1MHz | 0.7 | 1.1 | 1.8 | W | |
| Ciss | Input Capacitance | VGS=0V, VDS=20V, Frekwinsje=1.0MHz | - | 1125 | - | pF | |
| Coss | Output Capacitance | - | 132 | - | |||
| Crss | Reverse Transfer Capacitance | - | 70 | - | |||
| td(ON) | Ynskeakelje fertraging Tiid | VDD=20V, RL=20W,IDS=1A, VGEN=10V, RG=1W | - | 12.6 | - | ns | |
| tr | Ynskeakelje Rise Tiid | - | 10 | - | |||
| td(OFF) | Turn-off Delay Tiid | - | 23.6 | - | |||
| tf | Turn-off Fall Tiid | - | 6 | - | |||
| Gate Charge Characteristics d | |||||||
| Qg | Totale Gate Charge | VDS=20V, VGS=4.5V, IDS=7A | - | 9.4 | - | nC | |
| Qg | Totale Gate Charge | VDS=20V, VGS=10V, IDS=7A | - | 20 | 28 | ||
| Qgth | Threshold Gate Charge | - | 2 | - | |||
| Qgs | Gate-Boarne Charge | - | 3.9 | - | |||
| Qgd | Gate-Drain Charge | - | 3 | - | |||
Opmerking c:
Pulse test; polsbreedte £ 300ms, duty cycle £ 2%.
