WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET

koarte beskriuwing:

Model Oantal:WSP4099

BVSS:-40V

RDSON:30mΩ

ID:-6.5A

Kanaal:Dual P-kanaal

Pakket:SOP-8

Produkt Summery:De WSP4099 MOSFET hat in spanning fan -40V, in stroom fan -6.5A, in wjerstân fan 30mΩ, in Dual P-Channel, en komt yn in SOP-8-pakket.

Applikaasjes:Elektroanyske sigaretten, draadloze opladen, motoren, drones, medyske, autoladers, controllers, digitale produkten, lytse apparaten, konsuminteelektronika.

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Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WSP4099 is in krêftige sleuf P-ch MOSFET mei in hege sel tichtens. It leveret poerbêste RDSON- en poartelading, wêrtroch it geskikt is foar de measte syngroane buck-konverterapplikaasjes. It foldocht oan RoHS en GreenProduct noarmen en hat 100% EAS garânsje mei folsleine funksje betrouberens goedkarring.

Features

Avansearre Trench Technology mei hege sel tichtens, ultra-lege poarte lading, poerbêst CdV / dt effekt ferfal en in 100% EAS garânsje binne alle funksjes fan ús griene apparaten dy't maklik beskikber.

Applikaasjes

Heechfrekwinsje Point-of-Load Synchronous Buck Converter foar MB/NB/UMPC/VGA, Netwurk DC-DC Power System, Load Switch, E-sigaretten, draadloze opladen, motoren, drones, medyske soarch, autoladers, controllers, digitale produkten , lytse húshâldlike apparaten, en konsuminteelektronika.

korrespondearjend materiaal nûmer

ON FDS4685, VISHAY Si4447ADY, TOSHIBA TPC8227-H, PANJIT PJL9835A, Sinopower SM4405BSK, dintek DTM4807, ruichips RU40S4H.

Wichtige parameters

Symboal	Parameter	Wurdearring	Units
VDS	Drain-boarne Voltage	-40	V
VGS	Gate-Boarne Voltage	±20	V
ID@TC=25℃	Trochrinnende Drain Strom, -VGS @ -10V1	-6.5	A
ID@TC=100℃	Trochrinnende Drain Strom, -VGS @ -10V1	-4.5	A
IDM	Pulsearre Drain Strom 2	-22	A
EAS	Single Pulse Avalanche Energy3	25	mJ
IAS	Avalanche Aktueel	-10	A
PD@TC=25℃	Totale krêftdissipaasje 4	2.0	W
TSTG	Storage Temperatur Range	-55 oant 150	℃
TJ	Operating Junction temperatuerberik	-55 oant 150	℃

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS temperatuer koëffisjint	Referinsje nei 25 ℃, ID = -1mA	---	-0.02	---	V/℃
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=-10V, ID=-6.5A	---	30	38	mΩ
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=-4.5V, ID=-4.5A	---	46	62	mΩ
VGS (de)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-1.5	-2.0	-2.5	V
△VGS(th)	VGS (th) temperatuer koëffisjint	VGS=VDS, ID =-250uA	---	3.72	---	V/℃
IDSS	Drain-Boarne Leakage Current	VDS=-32V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Boarne Leakage Current	VDS=-32V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Boarne Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V, ID=-4A	---	8	---	S
Qg	Totale Gate Charge (-4.5V)	VDS=-20V, VGS=-4.5V, ID=-6.5A	---	7.5	---	nC
Qgs	Gate-Boarne Charge		---	2.4	---
Qgd	Gate-Drain Charge		---	3.5	---
Td (oan)	Turn-On fertraging Tiid	VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A ,RL=20Ω	---	8.7	---	ns
Tr	Rise Tiid		---	7	---
Td (út)	Turn-Off fertraging Tiid		---	31	---
Tf	Fall Tiid		---	17	---
Ciss	Input Capacitance	VDS=-15V, VGS=0V, f=1MHz	---	668	---	pF
Coss	Output Capacitance		---	98	---
Crss	Reverse Transfer Capacitance		---	72	---