WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET
Algemiene beskriuwing
De WSP4099 is in krêftige sleuf P-ch MOSFET mei in hege sel tichtens.It leveret poerbêste RDSON- en poartelading, wêrtroch it geskikt is foar de measte syngroane buck-konverterapplikaasjes.It foldocht oan RoHS en GreenProduct noarmen en hat 100% EAS garânsje mei folsleine funksje betrouberens goedkarring.
Features
Avansearre Trench Technology mei hege sel tichtens, ultra-lege poarte lading, poerbêst CdV / dt effekt ferfal en in 100% EAS garânsje binne alle funksjes fan ús griene apparaten dy't maklik beskikber.
Oanfraach
Heechfrekwinsje Point-of-Load Synchronous Buck Converter foar MB/NB/UMPC/VGA, Netwurk DC-DC Power System, Load Switch, E-sigaretten, draadloze opladen, motoren, drones, medyske soarch, autoladers, controllers, digitale produkten , lytse húshâldlike apparaten, en konsuminteelektronika.
korrespondearjend materiaal nûmer
ON FDS4685, VISHAY Si4447ADY, TOSHIBA TPC8227-H, PANJIT PJL9835A, Sinopower SM4405BSK, dintek DTM4807, ruichips RU40S4H.
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units |
| VDS | Drain-boarne Voltage | -40 | V |
| VGS | Gate-Boarne Voltage | ±20 | V |
| ID@TC=25℃ | Trochrinnende Drain Strom, -VGS @ -10V1 | -6.5 | A |
| ID@TC=100℃ | Trochrinnende Drain Strom, -VGS @ -10V1 | -4.5 | A |
| IDM | Pulsearre Drain Strom 2 | -22 | A |
| EAS | Single Pulse Avalanche Energy3 | 25 | mJ |
| IAS | Avalanche Aktueel | -10 | A |
| PD@TC=25℃ | Totale krêftferbrûk 4 | 2.0 | W |
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | ℃ |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = -1mA | --- | -0.02 | --- | V/℃ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=-10V, ID=-6.5A | --- | 30 | 38 | mΩ |
| VGS=-4.5V, ID=-4.5A | --- | 46 | 62 | |||
| VGS (de) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -1.5 | -2.0 | -2.5 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | 3.72 | --- | V/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=-32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-4A | --- | 8 | --- | S |
| Qg | Totale Gate Charge (-4.5V) | VDS=-20V, VGS=-4.5V, ID=-6.5A | --- | 7.5 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 2.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3.5 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A ,RL=20Ω | --- | 8.7 | --- | ns |
| Tr | Tiid om op te stean | --- | 7 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 31 | --- | ||
| Tf | Fall Tiid | --- | 17 | --- | ||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | --- | 668 | --- | pF |
| Coss | Output Capacitance | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 72 | --- |
