WSP6067A N&P-kanaal 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Algemiene beskriuwing
De WSP6067A MOSFET's binne de meast avansearre foar trench P-ch technology, mei in heul hege tichtens fan sellen. Se leverje poerbêste prestaasjes yn termen fan sawol de RDSON as poarte lading, geskikt foar de measte syngroane buck converters. Dizze MOSFET's foldogge oan RoHS- en Green Product-kritearia, mei 100% EAS dy't folsleine funksjonele betrouberens garandearret.
Features
Avansearre technology makket de formaasje fan selgrêften mei hege tichtheid mooglik, wat resulteart yn superlege poartelading en superieure CdV / dt-effektferfal. Us apparaten komme mei in 100% EAS-garânsje en binne miljeufreonlik.
Applikaasjes
Heechfrekwinsje Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-sigaretten, draadloos opladen, motors, drones, medyske apparatuer, autoladers, controllers, elektroanyske apparaten, lytse húshâldlike apparaten, en konsuminteelektronika .
korrespondearjend materiaal nûmer
AOS
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units | |
| N-kanaal | P-kanaal | |||
| VDS | Drain-Boarne Voltage | 60 | -60 | V |
| VGS | Gate-Boarne Voltage | ±20 | ±20 | V |
| ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 7.0 | -5.0 | A |
| ID@TC=100℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 4.0 | -2.5 | A |
| IDM | Pulsearre Drain Strom 2 | 28 | -20 | A |
| EAS | Single Pulse Avalanche Energy3 | 22 | 28 | mJ |
| IAS | Avalanche Aktueel | 21 | -24 | A |
| PD@TC=25℃ | Totale krêftdissipaasje 4 | 2.0 | 2.0 | W |
| TSTG | Storage Temperatur Range | -55 oant 150 | -55 oant 150 | ℃ |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | -55 oant 150 | ℃ |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = 1mA | --- | 0.063 | --- | V/℃ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=10V, ID=5A | --- | 38 | 52 | mΩ |
| VGS=4.5V, ID=4A | --- | 55 | 75 | |||
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1 | 2 | 3 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | -5.24 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=4A | --- | 28 | --- | S |
| Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 2.8 | 4.3 | Ω |
| Qg | Totale Gate Charge (4.5V) | VDS=48V, VGS=4.5V, ID=4A | --- | 19 | 25 | nC |
| Qgs | Gate-Boarne Charge | --- | 2.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 4.1 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=30V, VGS=10V, RG=3.3Ω, ID=1A | --- | 3 | --- | ns |
| Tr | Rise Tiid | --- | 34 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 23 | --- | ||
| Tf | Fall Tiid | --- | 6 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 1027 | --- | pF |
| Coss | Output Capacitance | --- | 65 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 45 | --- |
