WSR200N08 N-kanaal 80V 200A TO-220-3L WINSOK MOSFET
Algemiene beskriuwing
De WSR200N08 is de N-Ch MOSFET-sleuf mei heechste prestaasjes mei ekstreem hege sellentichtens, dy't poerbêste RDSON- en poartelading leverje foar de measte syngroane buck-konverterapplikaasjes. De WSR200N08 foldogge oan de RoHS en Green Product eask, 100% EAS garandearre mei folsleine funksje betrouberens goedkard.
Features
Avansearre Trench-technology mei hege sel tichtheid, Super Low Gate Charge, Excellent CdV / dt effekt ferfal, 100% EAS garandearre, Griene apparaat beskikber.
Applikaasjes
Tapassing wikselje, Power Management foar Inverter Systems, Elektroanyske sigaretten, draadloze opladen, motoren, BMS, needkrêftfoarsjenningen, drones, medysk, auto-opladen, controllers, 3D-printers, digitale produkten, lytse húshâldlike apparaten, konsuminteelektronika, ensfh.
korrespondearjend materiaal nûmer
AO AOT480L, ON FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, ensfh.
Wichtige parameters
Elektryske skaaimerken (TJ = 25 ℃, útsein as oars oanjûn)
| Symboal | Parameter | Wurdearring | Units |
| VDS | Drain-Boarne Voltage | 80 | V |
| VGS | Gate-Boarne Voltage | ±25 | V |
| ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 200 | A |
| ID@TC=100℃ | Trochrinnende Drain Strom, VGS @ 10V1 | 144 | A |
| IDM | Pulsed Drain Current2,TC=25°C | 790 | A |
| EAS | Avalanche Energy, Single puls, L = 0.5mH | 1496 | mJ |
| IAS | Lawinestream, Single puls, L=0.5mH | 200 | A |
| PD@TC=25℃ | Totale krêftdissipaasje 4 | 345 | W |
| PD@TC=100℃ | Totale krêftdissipaasje 4 | 173 | W |
| TSTG | Storage Temperatur Range | -55 oant 175 | ℃ |
| TJ | Operating Junction temperatuerberik | 175 | ℃ |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = 1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=10V,ID=100A | --- | 2.9 | 3.5 | mΩ |
| VGS (de) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=80V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=80V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±25V, VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Totale Gate Charge (10V) | VDS=80V, VGS=10V, ID=30A | --- | 197 | --- | nC |
| Qgs | Gate-Boarne Charge | --- | 31 | --- | ||
| Qgd | Gate-Drain Charge | --- | 75 | --- | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=50V, VGS=10V,RG=3Ω, ID=30A | --- | 28 | --- | ns |
| Tr | Rise Tiid | --- | 18 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 42 | --- | ||
| Tf | Fall Tiid | --- | 54 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 8154 | --- | pF |
| Coss | Output Capacitance | --- | 1029 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 650 | --- |
