WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Algemiene beskriuwing
De WST2011 MOSFET's binne de meast avansearre P-ch transistors beskikber, mei ongeëvenaarde sel tichtens. Se biede útsûnderlike prestaasjes, mei lege RDSON en poarte lading, wêrtroch't se ideaal foar lytse macht switching en load switch applikaasjes. Fierder foldocht de WST2011 RoHS en Green Product noarmen en hat folsleine-funksje betrouberens goedkarring.
Features
Avansearre Trench technology soarget foar hegere sel tichtens, resultearret yn in Grien Apparaat mei Super Low Gate Charge en poerbêst CdV / dt effekt ferfal.
Applikaasjes
Hege frekwinsje punt-of-load syngroane lytse macht switching is geskikt foar gebrûk yn MB / NB / UMPC / VGA, netwurk DC-DC macht systemen, load switches, e-sigaretten, controllers, digitale produkten, lytse húshâldlike apparaten, en konsumint elektroanika .
korrespondearjend materiaal nûmer
ON FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,
Wichtige parameters
| Symboal | Parameter | Wurdearring | Units | |
| 10s | Steady State | |||
| VDS | Drain-Boarne Voltage | -20 | V | |
| VGS | Gate-Boarne Voltage | ±12 | V | |
| ID@TA=25℃ | Trochrinnende Drain Strom, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Trochrinnende Drain Strom, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Pulsearre Drain Strom 2 | -12 | A | |
| PD@TA=25℃ | Totale Power Dissipation 3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Totale Power Dissipation 3 | 1.2 | 0.9 | W |
| TSTG | Storage Temperatur Range | -55 oant 150 | ℃ | |
| TJ | Operating Junction temperatuerberik | -55 oant 150 | ℃ | |
| Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
| BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = -1mA | --- | -0.011 | --- | V/℃ |
| RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=-4.5V, ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V, ID=-1A | --- | 95 | 115 | |||
| VGS (de) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS (th) temperatuer koëffisjint | --- | 3.95 | --- | mV/℃ | |
| IDSS | Drain-Boarne Leakage Current | VDS=-16V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Boarne Leakage Current | VGS=±12V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-2A | --- | 8.5 | --- | S |
| Qg | Totale Gate Charge (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Boarne Charge | --- | 1.1 | 1.7 | ||
| Qgd | Gate-Drain Charge | --- | 1.1 | 2.9 | ||
| Td (oan) | Turn-On fertraging Tiid | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Rise Tiid | --- | 9.3 | --- | ||
| Td (út) | Turn-Off fertraging Tiid | --- | 15.4 | --- | ||
| Tf | Fall Tiid | --- | 3.6 | --- | ||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | --- | 750 | --- | pF |
| Coss | Output Capacitance | --- | 95 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 68 | --- |
