WST4041 P-kanaal -40V -6A SOT-23-3L WINSOK MOSFET
Algemiene beskriuwing
De WST4041 is in krêftige P-kanaal MOSFET ûntworpen foar gebrûk yn syngroane buck-converters. It hat in hege sel tichtens dy't soarget foar poerbêste RDSON en poarte lading. De WST4041 foldocht oan easken foar RoHS- en Green Product-standerts, en it komt mei in 100% EAS-garânsje foar betroubere prestaasjes.
Features
Avansearre Trench Technology hat hege sel tichtens en super lege poarte lading, signifikant ferminderjen fan it CdV / dt effekt. Us apparaten komme mei in 100% EAS-garânsje en miljeufreonlike opsjes.
Applikaasjes
Heechfrekwinsje punt-of-load synchrone buck converter, netwurk DC-DC macht systeem, load switch, e-sigaretten, controllers, digitale apparaten, lytse húshâldlike apparaten, en konsumint elektroanika.
korrespondearjend materiaal nûmer
AOS AO3409 AOS3403 AOS3421 AOS3421E AO3401 AOS3401A,dintek DTS4501,ncepower NCE40P05Y,
Wichtige parameters
Symboal | Parameter | Wurdearring | Units |
VDS | Drain-Boarne Voltage | -40 | V |
VGS | Gate-Boarne Voltage | ±20 | V |
ID@TC=25℃ | Trochrinnende Drain Strom, VGS @ -10V1 | -6.0 | A |
ID@TC=100℃ | Trochrinnende Drain Strom, VGS @ -10V1 | -4.5 | A |
IDM | Pulsearre Drain Strom 2 | -24 | A |
EAS | Single Pulse Avalanche Energy3 | 12 | mJ |
IAS | Avalanche Aktueel | -7 | A |
PD@TC=25℃ | Totale krêftdissipaasje 4 | 1.4 | W |
TSTG | Storage Temperatur Range | -55 oant 150 | ℃ |
TJ | Operating Junction temperatuerberik | -55 oant 150 | ℃ |
Symboal | Parameter | Betingsten | Min. | Typ. | Max. | Ienheid |
BVDS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -40 | --- | --- | V |
△BVDSS/△TJ | BVDSS temperatuer koëffisjint | Referinsje nei 25 ℃, ID = -1mA | --- | -0.03 | --- | V/℃ |
RDS(ON) | Statyske drain-boarne On-resistance2 | VGS=-10V, ID=-3A | --- | 30 | 40 | mΩ |
VGS=-4.5V, ID=-1A | --- | 40 | 58 | |||
VGS (de) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.8 | -1.2 | -2.2 | V |
△VGS(th) | VGS (th) temperatuer koëffisjint | --- | 4.56 | --- | mV/℃ | |
IDSS | Drain-Boarne Leakage Current | VDS=-28V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=-28V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Boarne Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
gfs | Forward Transconductance | VDS=-5V, ID=-3A | --- | 15 | --- | S |
Rg | Gate Ferset | VDS=0V, VGS=0V, f=1MHz | --- | 3.8 | --- | Ω |
Qg | Totale Gate Charge (-4.5V) | VDS=-18V, VGS=-10V, ID=-4A | --- | 9.5 | --- | nC |
Qgs | Gate-Boarne Charge | --- | 1.7 | --- | ||
Qgd | Gate-Drain Charge | --- | 2.0 | --- | ||
Td (oan) | Turn-On fertraging Tiid | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω | --- | 8 | --- | ns |
Tr | Rise Tiid | --- | 10 | --- | ||
Td (út) | Turn-Off fertraging Tiid | --- | 18 | --- | ||
Tf | Fall Tiid | --- | 8 | --- | ||
Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | --- | 420 | --- | pF |
Coss | Output Capacitance | --- | 77 | --- | ||
Crss | Reverse Transfer Capacitance | --- | 55 | --- |