WST4041 P-kanaal -40V -6A SOT-23-3L WINSOK MOSFET

WST4041 P-Channel -40V -6A SOT-23-3L WINSOK MOSFET Featured Image

koarte beskriuwing:

Model nûmer:WST4041

BVSS:-40V

RDSON:30mΩ

ID:-6A

Kanaal:P-kanaal

Pakket:SOT-23-3L

Produkt Summery:De WST4041 MOSFET hat in spanning fan -40V, stroom fan -6A, wjerstân fan 30mΩ, P-kanaal, en SOT-23-3L ferpakking.

Oanfraach:Elektroanyske sigaretten, controllers, digitale produkten, lytse apparaten, konsuminteelektronika.

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Produkt Detail

Oanfraach

Produkt Tags

Algemiene beskriuwing

De WST4041 is in krêftige P-kanaal MOSFET ûntworpen foar gebrûk yn syngroane buck-converters.It hat in hege sel tichtens dy't soarget foar poerbêste RDSON en poarte lading.De WST4041 foldocht oan easken foar RoHS- en Green Product-standerts, en it komt mei in 100% EAS-garânsje foar betroubere prestaasjes.

Features

Avansearre Trench Technology hat hege sel tichtens en super lege poarte lading, signifikant ferminderjen fan it CdV / dt effekt.Us apparaten komme mei in 100% EAS-garânsje en miljeufreonlike opsjes.

Oanfraach

Heechfrekwinsje punt-of-load syngroane buck converter, netwurk DC-DC macht systeem, load switch, e-sigaretten, controllers, digitale apparaten, lytse húshâldlike apparaten, en konsumint elektroanika.

korrespondearjend materiaal nûmer

AOS AO3409 AOS3403 AOS3421 AOS3421E AO3401 AOS3401A,dintek DTS4501,ncepower NCE40P05Y,

Wichtige parameters

Symboal	Parameter	Wurdearring	Units
VDS	Drain-boarne Voltage	-40	V
VGS	Gate-Boarne Voltage	±20	V
ID@TC=25℃	Trochrinnende Drain Strom, VGS @ -10V1	-6.0	A
ID@TC=100℃	Trochrinnende Drain Strom, VGS @ -10V1	-4.5	A
IDM	Pulsearre Drain Strom 2	-24	A
EAS	Single Pulse Avalanche Energy3	12	mJ
IAS	Avalanche Aktueel	-7	A
PD@TC=25℃	Totale krêftferbrûk 4	1.4	W
TSTG	Storage Temperatur Range	-55 oant 150	℃
TJ	Operating Junction temperatuerberik	-55 oant 150	℃

Symboal	Parameter	Betingsten	Min.	Typ.	Max.	Ienheid
BVDS	Drain-Source Breakdown Voltage	VGS=0V, ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS temperatuer koëffisjint	Referinsje nei 25 ℃, ID = -1mA	---	-0.03	---	V/℃
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=-10V, ID=-3A	---	30	40	mΩ
RDS(ON)	Statyske drain-boarne On-resistance2	VGS=-4.5V, ID=-1A	---	40	58	mΩ
VGS (de)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-0.8	-1.2	-2.2	V
△VGS(th)	VGS (th) temperatuer koëffisjint	VGS=VDS, ID =-250uA	---	4.56	---	mV/℃
IDSS	Drain-Boarne Leakage Current	VDS=-28V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Boarne Leakage Current	VDS=-28V, VGS=0V, TJ=55℃	---	---	5	uA
IGSS	Gate-Boarne Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V, ID=-3A	---	15	---	S
Rg	Gate Ferset	VDS=0V, VGS=0V, f=1MHz	---	3.8	---	Ω
Qg	Totale Gate Charge (-4.5V)	VDS=-18V, VGS=-10V, ID=-4A	---	9.5	---	nC
Qgs	Gate-Boarne Charge		---	1.7	---
Qgd	Gate-Drain Charge		---	2.0	---
Td (oan)	Turn-On fertraging Tiid	VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω	---	8	---	ns
Tr	Tiid om op te stean		---	10	---
Td (út)	Turn-Off fertraging Tiid		---	18	---
Tf	Fall Tiid		---	8	---
Ciss	Input Capacitance	VDS=-15V, VGS=0V, f=1MHz	---	420	---	pF
Coss	Output Capacitance		---	77	---
Crss	Reverse Transfer Capacitance		---	55	---